射频MEMS电容开关在恶劣环境下的鲁棒性

C. Goldsmith, J.C.M. Hwang, C. Gudeman, O. Auciello, J. Ebel, H. Newman
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引用次数: 7

摘要

自早期在不受控制的环境中测试未封装器件以来,RF MEMS开关已经发生了重大变化,其故障模式只能猜测。今天,MEMS开关技术具有有效的,rf友好的晶圆级封装,具有温度稳健性,并且可以通过加速测试来表征和建模故障模式。本报告概述了DARPA的HERMIT项目中射频MEMS开关在封装、可靠性和环境稳健性方面的进展。它还包括新型纳米结构开关电介质,CMOS协整,智能CMOS控制以及RF MEMS在不利热和辐射环境中的操作的最新发展。
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Robustness of RF MEMS capacitive switches in Harsh Environments
RF MEMS switches have evolved significantly since the early days of testing unpackaged devices in an uncontrolled environment with failure modes that could only be guessed at. Today, MEMS switch technology has effective, RF-friendly wafer-level packaging, demonstrated temperature robustness, and failure modes that can be characterized and modeled from accelerated testing. This presentation overviews the advances in packaging, reliability, and environmental robustness for RF MEMS switches made on DARPA's HERMIT program. It also includes more recent developments in novel nanostructured switch dielectrics, CMOS co-integration, intelligent CMOS control, and operation of RF MEMS in adverse thermal and radiation environments.
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