L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee
{"title":"用于HPM调制器的固态功率开关","authors":"L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee","doi":"10.1109/PPC.1995.596456","DOIUrl":null,"url":null,"abstract":"Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.","PeriodicalId":11163,"journal":{"name":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Solid-state power switches for HPM modulators\",\"authors\":\"L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee\",\"doi\":\"10.1109/PPC.1995.596456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.\",\"PeriodicalId\":11163,\"journal\":{\"name\":\"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPC.1995.596456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.1995.596456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
