{"title":"高沉积速率非晶硅太阳能电池:硅烷还是二硅烷?","authors":"D.S. Shen , H. Chatham , P.K. Bhat","doi":"10.1016/0379-6787(91)90059-X","DOIUrl":null,"url":null,"abstract":"<div><p>We report a comparison study of high-deposition-rate (approximately 2 nm s<sup>−1</sup>) amorphous hydrogenated silicon (a-Si:H) solar cells using silane (SiH<sub>4</sub>) and disilane (Si<sub>2</sub>H<sub>6</sub>) source gases. Our results show that under optimized deposition conditions, films deposited from silane or disilane at the same deposition rate have similar properties. Efficiencies higher than 10% have been achieved in both cases for 1 cm<sup>2</sup> area single-junction solar cells. The key for achieving high efficiency, high-deposition-rate, solar cells using SiH<sub>4</sub> source gas is the p-i interface.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 271-275"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90059-X","citationCount":"6","resultStr":"{\"title\":\"High-deposition-rate amorphous silicon solar cells: silane or disilane?\",\"authors\":\"D.S. Shen , H. Chatham , P.K. Bhat\",\"doi\":\"10.1016/0379-6787(91)90059-X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We report a comparison study of high-deposition-rate (approximately 2 nm s<sup>−1</sup>) amorphous hydrogenated silicon (a-Si:H) solar cells using silane (SiH<sub>4</sub>) and disilane (Si<sub>2</sub>H<sub>6</sub>) source gases. Our results show that under optimized deposition conditions, films deposited from silane or disilane at the same deposition rate have similar properties. Efficiencies higher than 10% have been achieved in both cases for 1 cm<sup>2</sup> area single-junction solar cells. The key for achieving high efficiency, high-deposition-rate, solar cells using SiH<sub>4</sub> source gas is the p-i interface.</p></div>\",\"PeriodicalId\":101172,\"journal\":{\"name\":\"Solar Cells\",\"volume\":\"30 1\",\"pages\":\"Pages 271-275\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0379-6787(91)90059-X\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar Cells\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/037967879190059X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Cells","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/037967879190059X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-deposition-rate amorphous silicon solar cells: silane or disilane?
We report a comparison study of high-deposition-rate (approximately 2 nm s−1) amorphous hydrogenated silicon (a-Si:H) solar cells using silane (SiH4) and disilane (Si2H6) source gases. Our results show that under optimized deposition conditions, films deposited from silane or disilane at the same deposition rate have similar properties. Efficiencies higher than 10% have been achieved in both cases for 1 cm2 area single-junction solar cells. The key for achieving high efficiency, high-deposition-rate, solar cells using SiH4 source gas is the p-i interface.
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