Chia-Ying Tsai, Po-Han Chen, Yang-Yue Huang, Huai-Te Pen, P. Yu, H. Meng
{"title":"具有中间1,1-二[(二-4-甲苯胺)苯基]环己烷层的有机/硅-纳米线杂化异质结太阳能电池效率为11%","authors":"Chia-Ying Tsai, Po-Han Chen, Yang-Yue Huang, Huai-Te Pen, P. Yu, H. Meng","doi":"10.1109/PVSC.2013.6745155","DOIUrl":null,"url":null,"abstract":"Hybrid organic-inorganic heterojunction solar cells based on silicon nanowires (SiNWs) are promising candidates for next-generation photovoltaics owing to potentials for low fabrication cost and high efficiency. The SiNW array, fabricated by a simple metal-assisted wet chemical etching method, produces a large surface-area-to-volume ratio, hence allowing efficient light harvesting and charge collection via the formation of a core-sheath p-n junction. However, previously reported power conversion efficiencies (PCEs) are approximately capped at 10%, which is largely depicted by the interface defect densities that limit the open-circuit voltage (Voc) and fill factor (FF). In this work, we introduce a solution-processed, intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) layer to mitigate the interface recombination loss for hybrid heterojunction solar cells consisted of SiNWs and conjugate polymer poly(3,4-ethylenedioxy-thiophene): poly(styrenesulfonate) (PEDOT:PSS). A record PCE of 11.0% is achieved in contrast to 9.6% from a reference counterpart without TAPC, which represents an enhancement factor of 14.2% ascribed to noticeable improvement in the Voc and FF. The result is further supported by examining indicators for the interface quality via a suppressed dark saturation current and an enhanced minority carrier lifetime which exhibits an increase from 84 μsec without TAPC to 87 μsec with TAPC.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"3297-3299"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"11%-Efficiency hybrid organic/silicon-nanowire heterojunction solar cell with an intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane layer\",\"authors\":\"Chia-Ying Tsai, Po-Han Chen, Yang-Yue Huang, Huai-Te Pen, P. Yu, H. Meng\",\"doi\":\"10.1109/PVSC.2013.6745155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hybrid organic-inorganic heterojunction solar cells based on silicon nanowires (SiNWs) are promising candidates for next-generation photovoltaics owing to potentials for low fabrication cost and high efficiency. The SiNW array, fabricated by a simple metal-assisted wet chemical etching method, produces a large surface-area-to-volume ratio, hence allowing efficient light harvesting and charge collection via the formation of a core-sheath p-n junction. However, previously reported power conversion efficiencies (PCEs) are approximately capped at 10%, which is largely depicted by the interface defect densities that limit the open-circuit voltage (Voc) and fill factor (FF). In this work, we introduce a solution-processed, intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) layer to mitigate the interface recombination loss for hybrid heterojunction solar cells consisted of SiNWs and conjugate polymer poly(3,4-ethylenedioxy-thiophene): poly(styrenesulfonate) (PEDOT:PSS). A record PCE of 11.0% is achieved in contrast to 9.6% from a reference counterpart without TAPC, which represents an enhancement factor of 14.2% ascribed to noticeable improvement in the Voc and FF. The result is further supported by examining indicators for the interface quality via a suppressed dark saturation current and an enhanced minority carrier lifetime which exhibits an increase from 84 μsec without TAPC to 87 μsec with TAPC.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"1 1\",\"pages\":\"3297-3299\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6745155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6745155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
11%-Efficiency hybrid organic/silicon-nanowire heterojunction solar cell with an intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane layer
Hybrid organic-inorganic heterojunction solar cells based on silicon nanowires (SiNWs) are promising candidates for next-generation photovoltaics owing to potentials for low fabrication cost and high efficiency. The SiNW array, fabricated by a simple metal-assisted wet chemical etching method, produces a large surface-area-to-volume ratio, hence allowing efficient light harvesting and charge collection via the formation of a core-sheath p-n junction. However, previously reported power conversion efficiencies (PCEs) are approximately capped at 10%, which is largely depicted by the interface defect densities that limit the open-circuit voltage (Voc) and fill factor (FF). In this work, we introduce a solution-processed, intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) layer to mitigate the interface recombination loss for hybrid heterojunction solar cells consisted of SiNWs and conjugate polymer poly(3,4-ethylenedioxy-thiophene): poly(styrenesulfonate) (PEDOT:PSS). A record PCE of 11.0% is achieved in contrast to 9.6% from a reference counterpart without TAPC, which represents an enhancement factor of 14.2% ascribed to noticeable improvement in the Voc and FF. The result is further supported by examining indicators for the interface quality via a suppressed dark saturation current and an enhanced minority carrier lifetime which exhibits an increase from 84 μsec without TAPC to 87 μsec with TAPC.