Jim Turner MBE, David Smith
{"title":"Plessey GaAs lives on -","authors":"Jim Turner MBE,&nbsp;David Smith","doi":"10.1016/0959-3527(90)90174-R","DOIUrl":null,"url":null,"abstract":"<div><p>The Plessey GaAs Foundry Process is based on proven, reliable technology with the greatest emphasis placed on manufacturability, reproducibility and yield. Since the introduction of commercial processes in 1985, Plessey has maintained a policy of enhancement and updating rather than replacement as new processes become available. For example, usable frequency limits have been pushed from 12GHz to 14GHz and now to 20GHz with 0.5μm technology and via holes. This policy will continue in the future. Advanced processes have been developed, for example, for the generation of many watts of mean power from a MMIC. A HEMT has also been demonstrated and this will form the core technology for the forthcoming Plessey F40 process which will operate at 40GHz.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 20-22"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90174-R","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro III-Vs Review","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/095935279090174R","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

Plessey GaAs铸造工艺基于成熟可靠的技术,最强调的是可制造性,可重复性和良率。自1985年引入商业流程以来,Plessey一直保持着增强和更新的政策,而不是随着新流程的出现而替换。例如,可用的频率限制已经从12GHz推到了14GHz,现在通过0.5μm技术和通孔推到了20GHz。这一政策将在未来继续实施。先进的工艺已经被开发出来,例如,从MMIC产生许多瓦的平均功率。HEMT也进行了演示,这将构成即将推出的Plessey F40工艺的核心技术,该工艺将在40GHz工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Plessey GaAs lives on -

The Plessey GaAs Foundry Process is based on proven, reliable technology with the greatest emphasis placed on manufacturability, reproducibility and yield. Since the introduction of commercial processes in 1985, Plessey has maintained a policy of enhancement and updating rather than replacement as new processes become available. For example, usable frequency limits have been pushed from 12GHz to 14GHz and now to 20GHz with 0.5μm technology and via holes. This policy will continue in the future. Advanced processes have been developed, for example, for the generation of many watts of mean power from a MMIC. A HEMT has also been demonstrated and this will form the core technology for the forthcoming Plessey F40 process which will operate at 40GHz.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Teaching the teachers The State of the GaAs market A normally-off process for analogue/digital GaAs ASICs The ECR etching of GaAs using methane/hydrogen mixtures Serving as GaAs catalysts Arati Prabhakar of DARPA talks to Jo Ann McDonald
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1