应用斯摩鲁霍夫斯基效应解释高k MIM电容器的电流-电压特性

W. Lau
{"title":"应用斯摩鲁霍夫斯基效应解释高k MIM电容器的电流-电压特性","authors":"W. Lau","doi":"10.1109/CSTIC.2017.7919803","DOIUrl":null,"url":null,"abstract":"In this paper, the Smoluchoski effect will be explained and is further used to understand the physics of the current-voltage (I–V) characteristics of high-k MIM capacitors in mixed-signal CMOS technology application.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"32 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The application of the Smoluchowski effect to explain the current-voltage characteristics of high-k MIM capacitors\",\"authors\":\"W. Lau\",\"doi\":\"10.1109/CSTIC.2017.7919803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the Smoluchoski effect will be explained and is further used to understand the physics of the current-voltage (I–V) characteristics of high-k MIM capacitors in mixed-signal CMOS technology application.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"32 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文将解释斯莫鲁乔斯基效应,并进一步用于理解混合信号CMOS技术应用中高k MIM电容器的电流-电压(I-V)特性的物理特性。
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The application of the Smoluchowski effect to explain the current-voltage characteristics of high-k MIM capacitors
In this paper, the Smoluchoski effect will be explained and is further used to understand the physics of the current-voltage (I–V) characteristics of high-k MIM capacitors in mixed-signal CMOS technology application.
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