用硅墨水技术局部掺杂高效太阳能电池

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI:10.1109/PVSC.2010.5614442

K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis

{"title":"用硅墨水技术局部掺杂高效太阳能电池","authors":"K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis","doi":"10.1109/PVSC.2010.5614442","DOIUrl":null,"url":null,"abstract":"Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"18 1","pages":"001465-001468"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Localized doping using silicon ink technology for high efficiency solar cells\",\"authors\":\"K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis\",\"doi\":\"10.1109/PVSC.2010.5614442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.\",\"PeriodicalId\":6424,\"journal\":{\"name\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"volume\":\"18 1\",\"pages\":\"001465-001468\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2010.5614442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 35th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2010.5614442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

通过Innovalight硅墨水技术，实现了选择性发射极结构的可控局部掺杂。二次离子质谱和扫描电容显微镜都显示了油墨印刷边界处突然的横向掺杂谱。用扫描电子显微镜的掺杂对比成像也验证了等锥体和锥体表面的均匀掺杂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Localized doping using silicon ink technology for high efficiency solar cells

Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 35th IEEE Photovoltaic Specialists Conference

自引率

0.00%

发文量