{"title":"体系和浮体结构对双栅垂直n-MOSFET的影响","authors":"N. Alias, M. Riyadi, K. Abdullah, R. Ismail","doi":"10.1063/1.3586972","DOIUrl":null,"url":null,"abstract":"The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET\",\"authors\":\"N. Alias, M. Riyadi, K. Abdullah, R. Ismail\",\"doi\":\"10.1063/1.3586972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].\",\"PeriodicalId\":6354,\"journal\":{\"name\":\"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.3586972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3586972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET
The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].
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