{"title":"聚苯胺/氧化锌异质结","authors":"B. Sharma, Babu Banothu, N. Khare","doi":"10.1063/1.3606057","DOIUrl":null,"url":null,"abstract":"Zinc Oxide (ZnO) based heterojunction has been fabricated by spin coating p‐type polymer Polyaniline on n‐type ZnO film. The ZnO film has been deposited by ultrasonically assisted chemical vapor deposition method on patterned Indium Tin Oxide coated glass substrate. Aluminum was deposited on top of the Polyaniline film by thermal evaporation. The current‐voltage (I‐V) characteristic of Polyaniline/ZnO shows diode like behavior. The I‐V characteristic was examined in the frame work of thermionic emission model. The ideality factor and barrier height were obtained as ∼4.0 and ∼0.68 eV respectively.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"11 1","pages":"713-714"},"PeriodicalIF":0.0000,"publicationDate":"2011-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Polyaniline/ZnO Heterojunction\",\"authors\":\"B. Sharma, Babu Banothu, N. Khare\",\"doi\":\"10.1063/1.3606057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Zinc Oxide (ZnO) based heterojunction has been fabricated by spin coating p‐type polymer Polyaniline on n‐type ZnO film. The ZnO film has been deposited by ultrasonically assisted chemical vapor deposition method on patterned Indium Tin Oxide coated glass substrate. Aluminum was deposited on top of the Polyaniline film by thermal evaporation. The current‐voltage (I‐V) characteristic of Polyaniline/ZnO shows diode like behavior. The I‐V characteristic was examined in the frame work of thermionic emission model. The ideality factor and barrier height were obtained as ∼4.0 and ∼0.68 eV respectively.\",\"PeriodicalId\":16850,\"journal\":{\"name\":\"Journal of Physics C: Solid State Physics\",\"volume\":\"11 1\",\"pages\":\"713-714\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics C: Solid State Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.3606057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics C: Solid State Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3606057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zinc Oxide (ZnO) based heterojunction has been fabricated by spin coating p‐type polymer Polyaniline on n‐type ZnO film. The ZnO film has been deposited by ultrasonically assisted chemical vapor deposition method on patterned Indium Tin Oxide coated glass substrate. Aluminum was deposited on top of the Polyaniline film by thermal evaporation. The current‐voltage (I‐V) characteristic of Polyaniline/ZnO shows diode like behavior. The I‐V characteristic was examined in the frame work of thermionic emission model. The ideality factor and barrier height were obtained as ∼4.0 and ∼0.68 eV respectively.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
