Pub Date : 2016-01-01DOI: 10.1016/BS.SSP.2016.08.001
D. Schmool, H. Kachkachi
{"title":"Chapter One - Collective Effects in Assemblies of Magnetic Nanaparticles","authors":"D. Schmool, H. Kachkachi","doi":"10.1016/BS.SSP.2016.08.001","DOIUrl":"https://doi.org/10.1016/BS.SSP.2016.08.001","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"79 1","pages":"1-101"},"PeriodicalIF":0.0,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79047246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
La0.33NbO3 ceramics was prepared via conventional solid-state reaction method. Structural analysis show the existence of single phase of La0.33NbO3 has been synthesized with an average particle size of 2 µm – 4 µm estimated from FESEM image. Detailed investigation on the dielectric properties and AC conductivity of the La0.33NbO3 ceramics in a wide range of frequency (800 Hz – 5 MHz) and temperatures (30 °C – 300 °C) revealed that these properties are strongly temperature and frequency dependent.
{"title":"Investigation of dielectric properties of La0.33NbO3 ceramics","authors":"T. Mondal, P. M. Sarun, Sayantani Das, T. Sinha","doi":"10.1063/1.4918099","DOIUrl":"https://doi.org/10.1063/1.4918099","url":null,"abstract":"La0.33NbO3 ceramics was prepared via conventional solid-state reaction method. Structural analysis show the existence of single phase of La0.33NbO3 has been synthesized with an average particle size of 2 µm – 4 µm estimated from FESEM image. Detailed investigation on the dielectric properties and AC conductivity of the La0.33NbO3 ceramics in a wide range of frequency (800 Hz – 5 MHz) and temperatures (30 °C – 300 °C) revealed that these properties are strongly temperature and frequency dependent.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"25 1","pages":"110043"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72999082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Samples of pure and Ni doped ZnO nanocrystals with nominal compositions (x = 0.00, 0.03, 0.05) were successfully synthesized by Co-precipitation method. These samples were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier Transform Infrared Spectrometer (FTIR). From XRD patterns it is confirmed that all samples have hexagonal (wurtzite) structure without formation any secondary phases. Atomic packing fraction (APF) and c/a ratio were calculated using XRD data. The lattice parameters of samples decrease with increasing Ni concentration. The average crystalline size was calculated by Scherrer’s formula and it is found that the average crystalline size is in the range 43-56 nm. The SEM micrographs of samples show the agglomeration of nanocrystals. Chemical species of the samples were detected using FTIR spectra. It confirms the formation of ZnO with the stretching vibrational mode around at 512 cm−1.
{"title":"Substitutional effect of Ni on different properties of ZnO nanocrystals","authors":"H. Khawal, U. Gawai, B. Dole","doi":"10.1063/1.4917781","DOIUrl":"https://doi.org/10.1063/1.4917781","url":null,"abstract":"Samples of pure and Ni doped ZnO nanocrystals with nominal compositions (x = 0.00, 0.03, 0.05) were successfully synthesized by Co-precipitation method. These samples were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier Transform Infrared Spectrometer (FTIR). From XRD patterns it is confirmed that all samples have hexagonal (wurtzite) structure without formation any secondary phases. Atomic packing fraction (APF) and c/a ratio were calculated using XRD data. The lattice parameters of samples decrease with increasing Ni concentration. The average crystalline size was calculated by Scherrer’s formula and it is found that the average crystalline size is in the range 43-56 nm. The SEM micrographs of samples show the agglomeration of nanocrystals. Chemical species of the samples were detected using FTIR spectra. It confirms the formation of ZnO with the stretching vibrational mode around at 512 cm−1.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"41 1","pages":"050140"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81599023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Harish, A. Silambarasan, M. Navaneethan, J. Archana, S. Ponnusamy, C. Muthamizhchelvan, Y. Hayakawa
ZnO-SnO nanocomposites were synthesized by a simple hydrothermal method. It was found that Sn concentration acted as a crucial factor in determining the morphology of ZnO-SnO nanostructures, in the presence of ethylenediamine (EDA) as a stabilizing agent. XRD analysis confirmed the formation of ZnO and SnO with good crystallinity. The morphological analysis revealed tin oxide (SnO) nanoparticles coated on the surface of ZnO nanorods and nanosheets. The photocatalytic activity of synthesized samples were evaluated by methylene blue (MB) as a model pollutant under visible light irradiation. Photocatalysis studies revealed that, ZnO-SnO nanocomposites show the enhanced photocatalytic activity compared to ZnO, which could be attributed to the formation of hetero-junction between ZnO and SnO of MB degradation. Sn concentration can extend the light absorption spectra of ZnO to visible light region and enhance the visible light photocatalytic activity. This research could provide new insights to the development of excellent photocatalyst with efficient performance for pollution control.
{"title":"ZnO:SnO nanorods and nanosheets and their enhanced photocatalytic activity under visible light irradiation","authors":"S. Harish, A. Silambarasan, M. Navaneethan, J. Archana, S. Ponnusamy, C. Muthamizhchelvan, Y. Hayakawa","doi":"10.1063/1.4917776","DOIUrl":"https://doi.org/10.1063/1.4917776","url":null,"abstract":"ZnO-SnO nanocomposites were synthesized by a simple hydrothermal method. It was found that Sn concentration acted as a crucial factor in determining the morphology of ZnO-SnO nanostructures, in the presence of ethylenediamine (EDA) as a stabilizing agent. XRD analysis confirmed the formation of ZnO and SnO with good crystallinity. The morphological analysis revealed tin oxide (SnO) nanoparticles coated on the surface of ZnO nanorods and nanosheets. The photocatalytic activity of synthesized samples were evaluated by methylene blue (MB) as a model pollutant under visible light irradiation. Photocatalysis studies revealed that, ZnO-SnO nanocomposites show the enhanced photocatalytic activity compared to ZnO, which could be attributed to the formation of hetero-junction between ZnO and SnO of MB degradation. Sn concentration can extend the light absorption spectra of ZnO to visible light region and enhance the visible light photocatalytic activity. This research could provide new insights to the development of excellent photocatalyst with efficient performance for pollution control.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"104 1","pages":"050135"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80856654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The plate impact experiments have been carried out on 8mm thick target plates of aluminium alloy Al2014-T4 at impact velocities of 180 m/s, 290 m/s and 500m/s, respectively, using single stage gas gun facility. In each experiment, the of free surface velocity history of the sample plate is measured using VISAR instrument and utilized to determine the spall strength and dynamic yield strength of this material. The spall strength of 0.87 GPa, 0.97 GPa and 1.11 GPa, respectively, measured for impact velocities of 180 m/s, 290 m/s and 500 m/s with corresponding average strain rates varying from 1.36×104/s to 2.41×14/s has been found to display nearly linear dependence upon the strain rates. The dynamic yield strength with its value ranging from 0.395 GPa to 0.400 GPa, though, is higher than the quasi static value of 0.355GPa, appears to be relatively independent of impact velocities up to at least 500 m/s or equivalently strain rates up to ∼ 9.4×104/s.
{"title":"Shock induced spall fracture in aluminium alloy \"Al2014-T4\"","authors":"K. Joshi, A. Rav, A. Sur, P. Das, S. Gupta","doi":"10.1063/1.4917859","DOIUrl":"https://doi.org/10.1063/1.4917859","url":null,"abstract":"The plate impact experiments have been carried out on 8mm thick target plates of aluminium alloy Al2014-T4 at impact velocities of 180 m/s, 290 m/s and 500m/s, respectively, using single stage gas gun facility. In each experiment, the of free surface velocity history of the sample plate is measured using VISAR instrument and utilized to determine the spall strength and dynamic yield strength of this material. The spall strength of 0.87 GPa, 0.97 GPa and 1.11 GPa, respectively, measured for impact velocities of 180 m/s, 290 m/s and 500 m/s with corresponding average strain rates varying from 1.36×104/s to 2.41×14/s has been found to display nearly linear dependence upon the strain rates. The dynamic yield strength with its value ranging from 0.395 GPa to 0.400 GPa, though, is higher than the quasi static value of 0.355GPa, appears to be relatively independent of impact velocities up to at least 500 m/s or equivalently strain rates up to ∼ 9.4×104/s.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"71 1","pages":"060024"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83936551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We demonstrate dynamics of non magnetic particle in magnetic nanofluid media subjected to rotational magnetic field. We developed such technique which can able to rotate non magnetic microstructure at any angle between 0° to 360° using magnetic field. A single Bentonite particle of the order of ∼ 600nm was trapped by magnetic nano particles (∼ 9.3 nm) which posses’ magnetic moment, direction of such magnetic moment changes according to rotational magnetic field. Small asymmetries in nano particle orientation within media cause micro particle as whole exhibit prefers direction of magnetization or easy axis. These small anisotropies provide directional preference thus particle can be orientation controlled. In the influence of rotational magnetic field micro particle displays rotational as well as tumbling motion under certain conditions. This method of manipulation of anisotropic non magnetic particle has potential application to manipulating biological assemblies.
{"title":"Rotational dynamics of anisotropic particle in magnetic nanofluid","authors":"H. Virpura, R. Patel","doi":"10.1063/1.4917785","DOIUrl":"https://doi.org/10.1063/1.4917785","url":null,"abstract":"We demonstrate dynamics of non magnetic particle in magnetic nanofluid media subjected to rotational magnetic field. We developed such technique which can able to rotate non magnetic microstructure at any angle between 0° to 360° using magnetic field. A single Bentonite particle of the order of ∼ 600nm was trapped by magnetic nano particles (∼ 9.3 nm) which posses’ magnetic moment, direction of such magnetic moment changes according to rotational magnetic field. Small asymmetries in nano particle orientation within media cause micro particle as whole exhibit prefers direction of magnetization or easy axis. These small anisotropies provide directional preference thus particle can be orientation controlled. In the influence of rotational magnetic field micro particle displays rotational as well as tumbling motion under certain conditions. This method of manipulation of anisotropic non magnetic particle has potential application to manipulating biological assemblies.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"30 1-2","pages":"050144"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91491217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Conducting polymer based heterojunction films were synthesized using spin coating technique. Current – Voltage (I-V) characteristics of the films were investigated before and after annealing up to 80°C. It was found that Schottky emission is main charge transfer mechanism observed for the films. Annealing strongly influences the I-V characteristics suggesting a strong change in internal morphology due to thermally assisted phase separation. The relative dielectric permittivity was calculated which depends on the applied field as well as annealing temperature.
{"title":"Electrical transport in heterojunction polymer films","authors":"S. Rathi, Amarjeet Singh","doi":"10.1063/1.4917836","DOIUrl":"https://doi.org/10.1063/1.4917836","url":null,"abstract":"Conducting polymer based heterojunction films were synthesized using spin coating technique. Current – Voltage (I-V) characteristics of the films were investigated before and after annealing up to 80°C. It was found that Schottky emission is main charge transfer mechanism observed for the films. Annealing strongly influences the I-V characteristics suggesting a strong change in internal morphology due to thermally assisted phase separation. The relative dielectric permittivity was calculated which depends on the applied field as well as annealing temperature.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"59 1","pages":"060001"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84074491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe
VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.
{"title":"Growth and study of first order metal insulator transition in VO2 films","authors":"A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe","doi":"10.1063/1.4917942","DOIUrl":"https://doi.org/10.1063/1.4917942","url":null,"abstract":"VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"144 1","pages":"080038"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89370540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ashok Kumar, Haiying He, R. Pandey, P. Ahluwalia, K. Tankeshwar
We report structural and electronic properties of ZrS2 monolayer within density functional theory (DFT) by inclusion of Hubbard on-site Coulomb and exchange interactions. The importance of on-site interactions for both ZrS2 bulk and monolayer has been highlighted that significantly improves the electronic band-gap. It is demonstrated that mechanical strain induces structural phase transition that results in semiconductor-to-metal transition in monolayer ZrS2. This phenomenon has important implications in technological applications such as flexible, low power and transparent electronic devices.
{"title":"Semiconductor-to-metal phase transition in monolayer ZrS2: GGA+U study","authors":"Ashok Kumar, Haiying He, R. Pandey, P. Ahluwalia, K. Tankeshwar","doi":"10.1063/1.4917996","DOIUrl":"https://doi.org/10.1063/1.4917996","url":null,"abstract":"We report structural and electronic properties of ZrS2 monolayer within density functional theory (DFT) by inclusion of Hubbard on-site Coulomb and exchange interactions. The importance of on-site interactions for both ZrS2 bulk and monolayer has been highlighted that significantly improves the electronic band-gap. It is demonstrated that mechanical strain induces structural phase transition that results in semiconductor-to-metal transition in monolayer ZrS2. This phenomenon has important implications in technological applications such as flexible, low power and transparent electronic devices.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"24 1","pages":"090016"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77957038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present the energy bands and density of states of ZnSnP2 using full potential linearized augmented plane wave method with modified Becke Johnson potential. It is found that this compound has a direct band gap of about 2.01 eV at Γ point, which originates from the energy difference between P-3p and Sn-5s states. In addition, we have also calculated absorption spectra in the solar energy range and compared it with that of bulk Si to explore the applicability of ZnSnP2 in photovoltaic and optoelectronic devices.
{"title":"Electronic properties and absorption spectra of ZnSnP2 using mBJ potential","authors":"R. Joshi, B. L. Ahuja","doi":"10.1063/1.4918114","DOIUrl":"https://doi.org/10.1063/1.4918114","url":null,"abstract":"We present the energy bands and density of states of ZnSnP2 using full potential linearized augmented plane wave method with modified Becke Johnson potential. It is found that this compound has a direct band gap of about 2.01 eV at Γ point, which originates from the energy difference between P-3p and Sn-5s states. In addition, we have also calculated absorption spectra in the solar energy range and compared it with that of bulk Si to explore the applicability of ZnSnP2 in photovoltaic and optoelectronic devices.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"29 1","pages":"120007"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80975716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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