提高了ZnO薄膜在Au纳米颗粒/p-Si上的生长质量

E. Gur, A. Baltakesmez, S. Tuzemen, Adem Yenisoy
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引用次数: 2

摘要

本研究采用热蒸发法在石英衬底上分别生长了5 nm、10nm、20nm厚度的金薄膜。为了获得金纳米颗粒,将膜在600℃或800℃氮气气氛中分别退火3h和6h。退火后得到的金纳米颗粒大小不等,平均在12-230 nm之间。在500nm-750nm之间的位移中观察到吸收。在p-Si衬底上也生长出了金纳米颗粒。采用电化学方法在金纳米颗粒/p-Si和参考pSi衬底上生长ZnO薄膜。对ZnO薄膜的表征表明,在Au纳米颗粒上生长的ZnO薄膜具有更好的晶体取向、更大的晶粒尺寸、更高的吸收系数和器件性能。
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Improved growth quality of the ZnO thin films on Au nano-particles/p-Si
In this study, gold thin films were grown 5 nm, 10nm, 20nm thicknesses on quartz substrate by thermal evaporation. In order to obtain Au nanoparticle films were annealed 3h and 6h at 600 °C or 800 °C in nitrogen atmosphere. After annealing gold nanoparticles were obtained varying in sizes averaged between 12-230 nm. Absorption in shift between 500nm-750nm has been observed. Au gold nanoparticles were also grown on p-Si substrate. ZnO thin films were grown by electrochemically on both gold nanoparticle/p-Si and reference pSi substrates. Characterizations of the ZnO thin films has shown that the thin films grown on Au nanoparticles has better crystal orientation, bigger grain sizes and higher absorption coefficient and device performance.
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