{"title":"BSIMPD:用于深亚微米CMOS设计的部分耗尽SOI MOSFET模型","authors":"P. Su, S. Fung, S. Tang, F. Assaderaghi, C. Hu","doi":"10.1109/CICC.2000.852647","DOIUrl":null,"url":null,"abstract":"BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"13 1","pages":"197-200"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs\",\"authors\":\"P. Su, S. Fung, S. Tang, F. Assaderaghi, C. Hu\",\"doi\":\"10.1109/CICC.2000.852647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":\"13 1\",\"pages\":\"197-200\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs
BSIMPD, a physics-based SPICE model, is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.
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