硅射频集成电路集成单片变压器的建模

Q3 Arts and Humanities Giornale di Storia Costituzionale Pub Date : 2004-12-13 DOI:10.1109/ICECS.2004.1399633

O. El-Gharniti, E. Kerhervé, J. Bégueret, P. Jarry

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引用次数: 14

摘要

我们提出了一种紧凑和可扩展的模型，用于硅集成电路技术制造的片上变压器。模型由布局和工艺技术规范驱动。它适用于设计优化和电路仿真。采用电磁仿真对模型进行了验证。该模型与大频率范围内(1 ~ 15ghz)的电磁仿真结果非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of integrated monolithic transformers for silicon RF IC

We present a compact and scalable model for on-chip transformers fabricated in silicon IC technology. The model is driven from the layout and the process technology specifications. It is suitable for design optimization and circuit simulation. EM-simulation is used to validate the model. The proposed model shows excellent agreement with EM-simulation over a large frequency range (1-15 GHz).

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