原始石墨烯中的光致谷电子学

S. MrudulM., 'Alvaro Jim'enez-Gal'an, M. Ivanov, G. Dixit
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引用次数: 31

摘要

二维六边形材料中的电子具有谷自由度,可用于量子信息的编码和处理。由圆偏振光与材料的带隙共振所控制的谷选择激发,仍然是谷电子学的基础。通常认为,由于系统的反演对称性,在原始石墨烯中用全光手段实现谷选择激发是不可能的。在这里,我们证明了谷选择激发和谷选择高谐波的产生可以通过使用两个反向旋转的圆极化场,基频和二次谐波的组合来实现。控制两种颜色之间的相对相位使我们能够选择产生电子-空穴对和高次谐波的谷。我们还描述了一种用弱探针脉冲测量石墨烯谷偏振的全光方法。这项工作为在零带隙和零贝里曲率的材料中写入和读取谷选择电子激发提供了一个可靠的方法。
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Light-induced valleytronics in pristine graphene
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the material's band-gap, continues to be the foundation of valleytronics. It is often assumed that achieving valley selective excitation in pristine graphene with all-optical means is not possible due to the inversion symmetry of the system. Here we demonstrate that both valley-selective excitation and valley-selective high-harmonic generation can be achieved in pristine graphene by using the combination of two counter-rotating circularly polarized fields, the fundamental and its second harmonic. Controlling the relative phase between the two colours allows us to select the valleys where the electron-hole pairs and higher-order harmonics are generated. We also describe an all-optical method for measuring valley polarization in graphene with a weak probe pulse. This work offers a robust recipe to write and read valley-selective electron excitations in materials with zero bandgap and zero Berry curvature.
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