高密度单片6×30 Gb/s可调WDM发射机,通用III-V平台

W. Yao, M. Smit, M. Wale
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引用次数: 3

摘要

我们提出了一个高密度WDM发射机的设计和测量从一个简单的,低成本的通用光子铸造厂。InP上有源和无源器件的单片集成产生了具有20 nm可调谐性和每通道30 Gb/s调制的紧凑电路。这使得芯片支持180gb /s的高容量密度达到10gb /s/mm2。
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High-density monolithic 6×30 Gb/s tunable WDM transmitter in generic III-V platform
We present the design and measurement of a high-density WDM transmitter from a simple, low-cost generic photonic foundry. Monolithic integration of active and passive devices on InP yields a compact circuit with 20 nm tuneability and 30 Gb/s modulation per channel. This results in a chip supporting 180 Gb/s with a high capacity density of 10 Gb/s/mm2.
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