氧修饰(10,0)氮化铝纳米管的一环和n口:DFT研究

Ahmad Seif, Lila Torkashavand, F. Mohammadi
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引用次数: 1

摘要

摘要应用密度泛函理论研究了氧在(10,0)氮化铝纳米管(AlNNT)中的修饰。在所研究的(10,0)AlNNT的三种模型中计算或确定了带隙、状态和化学屏蔽各向同性(CSI)和化学屏蔽各向异性(CSA)的总(TDOS)和部分(PDOS)密度:原始(模型.0)、AlNNT中间一环的o型装饰(模型1)和AlNNT氮口的o型装饰(模型2)。结果表明,偶极矩对掺杂的影响不显著,而TDOS、PDOS和带隙能对掺杂的影响显著。在两种o修饰的AlNNTs模型中,Al和N原子的CSI和CSA值(对Al- o键或靠近修饰区的原子有贡献)都发生了变化。
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Oxygen decorating at the one ring and at the N-mouth of (10, 0) aluminum nitride nanotube: A DFT investigation
AbstractWe have investigated oxygen decorating in the (10, 0) aluminum nitride nanotube (AlNNT) by density functional theory. Band gaps, total (TDOS) and partial (PDOS) densities of state and chemical-shielding isotropic (CSI) and chemical-shielding anisotropic (CSA) have been calculated or determined in three models of the investigated (10, 0) AlNNT: pristine (model.0), O-decorating at the one ring in the middle of AlNNT (Model.1) and O-decorating at the nitrogen mouth of AlNNT (Model.2). The results indicated that the dipole moment does not detect the significant effects of dopant whereas TDOS, PDOS and band gap energies detect notable effects. The CSI and CSA values for the Al and N atoms-contributed to the Al-O bonds or those atoms close to the decorated region, in both models of O-decorated AlNNTs are changed.
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