{"title":"桥式培养CuInSe2中P-到n-型的钠转化","authors":"H. Myers, C. Champness, Y. Tan, I. Shih","doi":"10.1109/PVSC.2010.5614128","DOIUrl":null,"url":null,"abstract":"Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"000869-000872"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"P- to n-type conversion with sodium addition in bridgman-grown CuInSe2\",\"authors\":\"H. Myers, C. Champness, Y. Tan, I. Shih\",\"doi\":\"10.1109/PVSC.2010.5614128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.\",\"PeriodicalId\":6424,\"journal\":{\"name\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"volume\":\"30 1\",\"pages\":\"000869-000872\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2010.5614128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 35th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2010.5614128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
P- to n-type conversion with sodium addition in bridgman-grown CuInSe2
Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.