桥式培养CuInSe2中P-到n-型的钠转化

H. Myers, C. Champness, Y. Tan, I. Shih
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引用次数: 2

摘要

采用布里奇曼生长法,在石英安瓿中加入不同浓度的钠和过量的硒,制成了含有CuInSe2单晶的锭。CuInSe2锭名义上是p型,但可以通过在熔体中添加足够的钠来制成n型。少量的过量硒的加入需要大量的钠的加入才会发生类型转换。生长后在安瓿内发现的沉积物的出现强烈地指示了电导率类型。对一些样品进行了霍尔系数测量,并通过SEM/EDX进行了成分分析,发现生长的材料无论哪种类型都缺乏Cu。此外,对铸锭内部的分析发现,大块材料中没有Na,但在外表面发现了大量Na。这标志着钠第一次被证明只存在于表面,而不是存在于大块晶体中,在熔融生长的材料中,钠在化合物合成之前被添加。
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P- to n-type conversion with sodium addition in bridgman-grown CuInSe2
Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.
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