A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans
{"title":"氧在退火掺硅砷化镓中扩散的正电子湮没研究","authors":"A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans","doi":"10.1080/13642810208222942","DOIUrl":null,"url":null,"abstract":"Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.","PeriodicalId":20016,"journal":{"name":"Philosophical Magazine Part B","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide\",\"authors\":\"A. Towner, M. Nathwani, A. Saleh, D. P. van der Werf, P. Rice-Evans\",\"doi\":\"10.1080/13642810208222942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.\",\"PeriodicalId\":20016,\"journal\":{\"name\":\"Philosophical Magazine Part B\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Philosophical Magazine Part B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/13642810208222942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Philosophical Magazine Part B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/13642810208222942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide
Abstract Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO2 capped samples at 930°C causes the SiGa—VGa vacancies to become positively charged. The SiO2 caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.
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