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The magnetic properties of the Sherrington-Kirkpatrick model for spin glasses 自旋玻璃的谢林顿-柯克帕特里克模型的磁性
Pub Date : 2006-12-01 DOI: 10.1080/13642818008245416
G. Parisi
Abstract We have studied the magnetic properties of the Sherrington-Kirkpatrick model for spin glasses by performing Monte Carlo simulations for 200 spins. Excellent agreement is found with the theoretical predictions of the new version of the replica theory.
摘要通过对200个自旋进行蒙特卡罗模拟,研究了自旋玻璃的Sherrington-Kirkpatrick模型的磁性。与新版本的复制理论的理论预测非常吻合。
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引用次数: 7
3d transition metal intercalates of the niobium and trantalum dichalcogenides 二硫族铌和钽的过渡金属插层
Pub Date : 2006-08-20 DOI: 10.1080/01418638008224031
S. Parkin, A. Beal
Abstract Optical reflectivity spectra of the first-row transition metal intercalation complexes, M1/3NbS2 and M1/3TaS2 (M = V, Cr, Mn, Fe, Co, Ni), Mn1/4 TaS2 and Fe1/4 NbSe2 have been measured at room temperature and compared with those for the host compounds, 2H NbS2, 2H TaS2 and 2H NbSe2. It is found that a simple rigid-band model is inconsistent with the data and that it is necessary to include both broadening of the valence and the lowest conduction band through increased interlayer interactions and broadening of the 3d energy levels on the intercalate ions through interaction with the Nb or Ta d-band conduction electrons. Quantitative analysis of the free-carrier reflectivity edge is performed by fitting to a simple Drude model from which the free-carrier effective mass and scattering time can be deduced.
在室温下测定了第一排过渡金属插层配合物M1/3NbS2和M1/3TaS2 (M = V, Cr, Mn, Fe, Co, Ni)、Mn1/4 TaS2和Fe1/4 NbSe2的光学反射率光谱,并与主体化合物2H NbS2、2H TaS2和2H NbSe2进行了比较。发现简单的刚性带模型与数据不一致,有必要包括通过层间相互作用增加的价层和最低导带的展宽,以及通过与Nb或Ta d带传导电子相互作用的插层离子的三维能级的展宽。通过拟合一个简单的Drude模型对自由载流子的反射率边缘进行了定量分析,由此可以推导出自由载流子的有效质量和散射时间。
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引用次数: 44
An unusual hollow cylindrical Fermi surface of a quasi-two-dimensional compound CeAgSb2 准二维化合物CeAgSb2的不寻常的空心圆柱形费米表面
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222948
Y. Inada, A. Thamizhavel, H. Yamagami, T. Takeuchi, Y. Sawai, S. Ikeda, H. Shishido, T. Okubo, M. Yamada, K. Sugiyama, Noriko Nakamura, T. Yamamoto, K. Kindo, T. Ebihara, A. Galatanu, E. Yamamoto, R. Settai, Y. Ōnuki
Abstract We have carried out the de Haas-van Alphen (dHvA) experiment, together with electrical resistivity, magnetic susceptibility, magnetization and specific heat experiments on a high-quality single-crystal CeAgSb2, which has a small net ferromagnetic moment of 0.4 μB per Ce atom. The bulk magnetic properties are well explained by the crystalline electric field scheme. On the other hand, large dHvA frequencies of 108 Oe, which correspond to cylindrical Fermi surfaces, were detected by the dHvA measurement for the magnetic field along the tetragonal [001] direction, indicating the quasi-two-dimensional electronic structure. The dHvA branches of CeAgSb2 are highly different from those with small dHvA frequencies of 107 Oe for the reference compounds LaAgSb2 and YAgSb2 which exhibit a semimetallic character. The dHvA results have been compared with the results of the energy band calculations. It was concluded that the 4f electron is mainly localized and that the Fermi surface of CeAgSb2 is similar to that of LaAgSb2, but it is slightly enlarged so as to form the large orbits along a hollow cylindrical Fermi surface.
摘要对净铁磁矩为0.4 μB / Ce原子的高质量CeAgSb2单晶进行了de Haas-van Alphen (dHvA)实验,并进行了电阻率、磁化率、磁化率和比热实验。晶体电场图很好地解释了体磁性能。另一方面,沿四边形[001]方向的磁场dHvA测量检测到108 Oe的大dHvA频率,对应圆柱形费米面,表明准二维电子结构。CeAgSb2的dHvA分支与LaAgSb2和YAgSb2的dHvA分支有很大的不同,其dHvA频率为107 Oe,具有半金属性质。将dHvA计算结果与能带计算结果进行了比较。结果表明,4f电子主要是局域化的,CeAgSb2的费米面与LaAgSb2相似,但略有扩大,从而沿着空心圆柱形费米面形成大轨道。
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引用次数: 9
A new hypothesis about the mechanism of magnetic-domain formation 关于磁畴形成机制的新假设
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222947
F. Branda, G. Luciani, A. Costantini
Abstract This paper proposes a mechanism of formation of the magnetic domains on cooling a ferromagnetic material from a higher temperature than the Curie temperature. It is derived from the well-known theory of crystallization in an amorphous material through a two-step mechanism of nucleation and crystal growth. Following this approach it is shown that the domain structure should depend on the free-energy change ΔG per mole of magnetic moment aligning in the same direction. A method to avoid calculation of ΔG is shown. This approach was successfully applied to explain the differences between the domain structures of the annealed and the as-quenched samples of the amorphous alloy Fe62.5Co6Ni7.5Zr6Cu1Nb2B15. Moreover, it gives an explanation for recent findings on the magnetic microstructure of high-permeability materials.
摘要本文提出了铁磁材料在高于居里温度下冷却时磁畴形成的机理。它来源于著名的非晶材料的结晶理论,通过成核和晶体生长两步机制。根据这种方法表明,畴结构应取决于在同一方向上对齐的每摩尔磁矩的自由能变化ΔG。给出了一种避免计算ΔG的方法。该方法成功地解释了Fe62.5Co6Ni7.5Zr6Cu1Nb2B15非晶合金退火和淬火试样的畴结构差异。并对高磁导率材料的磁微观结构的最新发现作了解释。
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引用次数: 0
The origin of radiation instability in yttrium-ion-doped lead tungstate crystals 钇离子掺杂钨酸铅晶体辐射不稳定性的来源
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222946
Xin Zhang, J. Liao, Peijun Li, Z. Yin, Xiao-Xu Wu, X. Zong
Abstract Some Y3+-doped PbWO4 (PWO:Y3+) crystals grown by the modified Bridgman method showed exceptional behaviours, namely the increase in the light yield after low-dose-rate irradiation and also the improvement in the optical transmission at around 430 nm. In this paper, we studied the influences of high-temperature annealing in an oxygen-rich atmosphere on the stability of scintillation properties and radiation hardness of PWO: Y3+. The results show that annealing in oxygen enhances the absorption band at around 430 nm and makes optical transmission unstable at this wavelength after irradiation. After high-temperature annealing, the radiation-induced absorption coefficient is also negative around 430 nm. The 430 nm absorption band introduced by high-temperature annealing in oxygen has the same characteristics as the pre-existing bands in as-grown PWO: Y3+ crystals. So it decreases the stability of scintillation properties and radiation hardness of PWO: Y3+ crystals. The radiation instability relates to the formation of interstitial oxygen ions (Oi”) during high-temperature annealing. The results reveal that the oxygen-rich atmosphere during the crystal growth and annealing procedure is the origin of the exceptional irradiation behaviours in PWO: Y3+ crystals.
通过改进Bridgman法生长的掺杂Y3+的PbWO4 (ppo:Y3+)晶体表现出了特殊的行为,即低剂量率辐照后产光率增加,430 nm左右的光透射率也有所提高。本文研究了富氧气氛下高温退火对PWO: Y3+闪烁性能稳定性和辐射硬度的影响。结果表明,在氧中退火增强了430 nm左右的吸收带,使辐照后该波长的光传输不稳定。高温退火后,辐射诱导吸收系数在430 nm左右也为负。在氧中高温退火引入的430nm吸收带与生长态ppo: Y3+晶体中已有的吸收带具有相同的特征。从而降低了PWO: Y3+晶体闪烁性能的稳定性和辐射硬度。辐射不稳定性与高温退火过程中间隙氧离子(Oi)的形成有关。结果表明,晶体生长和退火过程中的富氧气氛是导致PWO: Y3+晶体异常辐照行为的原因。
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引用次数: 2
Invar effect in Pu-Ga alloys Pu-Ga合金中的Invar效应
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222945
A. Lawson, J. Roberts, B. Martinez, J. Richardson
Abstract We show that the anomalous thermal expansion behaviour of Pu-Ga alloys can be explained by an Invar effect, which is modelled by assuming the thermal transfer of Pu atoms from a lower-energy higher-volume Δ1, state to a higher-energy lower-volume Δ2 state. The energy separation of these states is found to be 1400 K from a fit to the available neutron diffraction data on the lattice constants of Pu-Ga alloys. The Invar model enables a precise evaluation of the coefficient of thermal expansion and of the Grüneisen constant. The addition of Ga forces a stabilization of the Δ2 state and suppresses the negative thermal expansion.
摘要:我们证明了Pu- ga合金的异常热膨胀行为可以用Invar效应来解释,该效应通过假设Pu原子从低能高体积Δ1,状态到高能低体积Δ2状态的热传递来建模。通过对cu - ga合金晶格常数的中子衍射数据拟合,发现这些态的能差为1400 K。Invar模型可以精确地计算热膨胀系数和粗尼森常数。Ga的加入使Δ2状态稳定,抑制了负热膨胀。
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引用次数: 30
In-plane field-effect correction in quantitative magneto-optical analysis 定量磁光分析中的面内场效应校正
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222944
F. Laviano, D. Botta, A. Chiodoni, R. Gerbaldo, G. Ghigo, L. Gozzelino, E. Mezzetti, S. Zannella
Abstract We present a detailed analysis of the calibration procedure to be performed in order to extract from magneto-optical images the local values of magnetic induction and electric current density on a plane over and inside the superconducting sample respectively. The interaction between the spontaneous magnetization of the indicator film and the full magnetic field distribution in the specimen region has been considered. In particular, the generally disregarded interaction of the indicator film with in-plane magnetic fields, that is with the component parallel to the indicator surface, is retained in the model. The current density distribution is obtained by the numerical inversion of the Biot-Savart law. In order to incorporate the in-plane field effect into the inversion scheme, we have constructed an iterative procedure which successfully takes into account the full magnetic induction field. A set of experimental data on a high-temperature superconducting YBa2Cu3O7-x film is presented to show the actual impact of the new analysis method, for what concerns both the local values of the magnetic induction and the electrical current density evaluation.
摘要本文详细分析了从磁光图像中提取超导样品表面和内部平面上磁感应强度和电流密度的局部值所需要执行的校准程序。考虑了指示膜的自发磁化强度与试样区全磁场分布之间的相互作用。特别是,通常被忽略的指示膜与面内磁场的相互作用,即与指示表面平行的分量,在模型中被保留。电流密度分布是通过对Biot-Savart定律的数值反演得到的。为了将面内场效应纳入反演方案,我们构造了一个考虑全磁感应场的迭代过程。以高温超导YBa2Cu3O7-x薄膜的实验数据为例,说明了新分析方法对局部磁感应值和电流密度评估的实际影响。
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引用次数: 1
Electronic band structure and the X-ray photoemission spectrum of UCu5In UCu5In的电子能带结构和x射线光发射光谱
Pub Date : 2002-12-01 DOI: 10.1080/13642810208222949
G. Chełkowska, J. Morkowski, A. Szajek, R. Tro
Abstract The family of compounds UCu5M (M ≡ Al, In or Sn) is characterized by the coexistence of magnetic order (antiferromagnetic for M ≡ Al and In; ferri-magnetic for M ≡ Sn) and Kondo lattice effects, by moderate electronic specific heat enhancement (γ/γ0 ≈ 8 for Al; γ/γ0 ≈ 11 for both In and Sn) and possibly a mixed-valence ground state. The electronic band structure was calculated by the tight-binding linear muffin-tin orbital method in the atomic sphere approximation. The electronic structure of UCu5In not unexpectedly shows marked similarities to the electronic structure of the other compounds of the family. The valence band, having a width of about 6eV, is due to prevalent contributions from the Cu 3d and U 5f electrons; the peak from the 5f electrons is situated just above the Fermi level. The X-ray photoemission spectra were taken in vacuum of 5 × 10−10 Torr from the sample surface prepared in situ. Satisfactory agreement between the measured spectrum and that obtained from the calculated electronic structure has been achieved.
化合物UCu5M (M≡Al, In或Sn)族具有磁序共存的特点(M≡Al和In为反铁磁性;铁磁性对M≡Sn)和近藤晶格效应,通过适度的电子比热增强(γ/γ0≈8对Al;γ/γ0≈11 (In和Sn),可能是混合价基态。用原子球近似下的紧密结合线性松饼锡轨道法计算了电子能带结构。UCu5In的电子结构与该家族其他化合物的电子结构毫不意外地显示出明显的相似性。价带宽度约为6eV,主要由Cu 3d和u5f电子贡献;5f电子的峰值刚好位于费米能级之上。在5 × 10−10 Torr的真空条件下,从原位制备的样品表面获得x射线光发射光谱。测量的光谱与计算得到的电子结构的光谱吻合得很好。
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引用次数: 7
Filamentary model of vibronic spectra of YBa2Cu3O6.95 YBa2Cu3O6.95的振动谱的细丝模型
Pub Date : 2002-11-01 DOI: 10.1080/13642810208223167
J. C. Phillips
Abstract Ellipsometric synchrotron spectroscopy of YBCO provides persuasive evidence supporting the Phillips-Jung (PJ) filamentary nanodomain model of the electronic structure of high-temperature superconductors (HTSCs). The PJ model is part of a universal off-lattice topological platform that explains the origin of the intermediate phase that is responsible for high-temperature superconductivity, the stiffness transition and reversibility window in network glasses, and the folding transitions of proteins. In HTSCs it is both more specific and more general than descriptions based on conventional collective modes related to charge-density waves.
YBCO的椭偏同步加速器光谱为高温超导体(HTSCs)电子结构的philips - jung (PJ)丝状纳米畴模型提供了有说服力的证据。PJ模型是通用的非晶格拓扑平台的一部分,该平台解释了导致高温超导的中间相的起源,网络玻璃中的刚度转变和可逆性窗口,以及蛋白质的折叠转变。在HTSCs中,它比基于与电荷密度波相关的传统集体模式的描述更具体,也更通用。
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引用次数: 0
Microstructure of epitaxial SrRuO3 films on Si(001) substrates Si(001)衬底外延SrRuO3薄膜的微观结构
Pub Date : 2002-11-01 DOI: 10.1080/13642810208223169
Y. X. Chen, J. Koike, T. Higuchi, S. Iwashita, M. Ishida, T. Shimoda
Abstract The microstructure of pulsed-laser-deposited SrRuO3 films on Si(001) with SrO buffer layers has been studied by means of high-resolution electron microscopy and energy-dispersive X-ray spectroscopy. It was found that good epitaxial growths of the SrO buffer layers and the subsequent SrRuO3 films were achieved on the Si(001) substrates. Multiple domains were formed in the SrRuO3 films with domain boundaries nearly perpendicular to the interface between the SrRuO3 films and the SrO buffer layers. A high density of planar defects, such as twins, stacking faults and antiphase boundaries, were formed along the (022) lattice plane of the SrRuO3 films. Lattice strains in the constituting layers were investigated by means of fast Fourier transformation of local regions in the high-resolution images. It was found that, close to the interface between the SrRuO3 films and the SrO buffer layers, both the layers were elastically strained in the opposite sense. The structure of coherent twin boundary in the SrRuO3 films was determined using a computer-aided high-resolution image simulation method. The comparison between the simulated and the experimental images indicated that the Sr-O plane constituted the twin boundary.
摘要:采用高分辨率电子显微镜和能量色散x射线能谱技术研究了脉冲激光在Si(001)上沉积SrRuO3薄膜的微观结构。研究发现,在Si(001)衬底上,SrO缓冲层和后续的SrRuO3薄膜实现了良好的外延生长。SrRuO3薄膜中形成了多个畴,畴边界几乎垂直于SrRuO3薄膜与SrO缓冲层之间的界面。在SrRuO3薄膜的(022)晶格平面上形成了高密度的孪晶、层错和反相边界等平面缺陷。通过对高分辨率图像局部区域的快速傅立叶变换,研究了构成层中的晶格应变。结果表明,在SrRuO3薄膜与SrO缓冲层的交界面附近,两层均呈现相反的弹性应变。采用计算机辅助的高分辨率图像模拟方法测定了SrRuO3薄膜中相干孪晶界的结构。模拟图像与实验图像的对比表明,Sr-O平面构成孪晶界。
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引用次数: 0
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Philosophical Magazine Part B
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