分子动力学模拟揭示了晶圆减薄过程的亚表面损伤机理

Xinxin Lin, F. Zhu, Liping He, Yongjun Pan, Jiaquan Tao, K. Duan
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引用次数: 0

摘要

三维集成电路作为传统二维工艺的延伸,被认为是延续摩尔定律的最佳选择。三维集成电路尺寸的极端小型化和结构的复杂组合对晶圆减薄等相关技术提出了更高的要求。在寻找新的晶圆减薄原理的过程中,对现有理论的深入了解是绝对必要的。
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Subsurface damage mechanism of wafer thinning process revealed by molecular dynamics simulation
Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer thinning, a deeper understanding of the existing theory is absolutely necessary.
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