VO2薄膜中一阶金属绝缘子跃迁的生长与研究

Journal of Physics C: Solid State Physics Pub Date : 2015-06-25 DOI:10.1063/1.4917942

A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe

{"title":"VO2薄膜中一阶金属绝缘子跃迁的生长与研究","authors":"A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe","doi":"10.1063/1.4917942","DOIUrl":null,"url":null,"abstract":"VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"144 1","pages":"080038"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and study of first order metal insulator transition in VO2 films\",\"authors\":\"A. Rathore, Satish Kumar, Dhirendra Kumar, V. Sathe\",\"doi\":\"10.1063/1.4917942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.\",\"PeriodicalId\":16850,\"journal\":{\"name\":\"Journal of Physics C: Solid State Physics\",\"volume\":\"144 1\",\"pages\":\"080038\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics C: Solid State Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.4917942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics C: Solid State Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.4917942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光沉积技术在硅衬底上生长了VO2薄膜。用V2O3靶材制备的沉积膜具有V2O5相的特征。在780℃退火时，薄膜转变为VO2相。退火膜沿(011)取向高，本质上为单相取向。高温拉曼光谱测量表明，在65℃左右，薄膜由单斜绝缘相向导电的四方金红石相一级转变。

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Growth and study of first order metal insulator transition in VO2 films

VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.

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Journal of Physics C: Solid State Physics

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