{"title":"纳米结构隧穿过程中电子-声子相互作用的影响","authors":"P. Arseyev, N. Maslova","doi":"10.1142/S0219581X07004535","DOIUrl":null,"url":null,"abstract":"Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in the resonant case. It is shown that the intensity and width of peaks in the tunneling conductivity is strongly influenced by nonequilibrium effects.","PeriodicalId":15816,"journal":{"name":"Journal of Experimental and Theoretical Physics Letters","volume":"1 1","pages":"297-301"},"PeriodicalIF":0.0000,"publicationDate":"2005-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effects of electron-phonon interaction in tunneling processes in nanostructures\",\"authors\":\"P. Arseyev, N. Maslova\",\"doi\":\"10.1142/S0219581X07004535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in the resonant case. It is shown that the intensity and width of peaks in the tunneling conductivity is strongly influenced by nonequilibrium effects.\",\"PeriodicalId\":15816,\"journal\":{\"name\":\"Journal of Experimental and Theoretical Physics Letters\",\"volume\":\"1 1\",\"pages\":\"297-301\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Experimental and Theoretical Physics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0219581X07004535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Experimental and Theoretical Physics Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0219581X07004535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of electron-phonon interaction in tunneling processes in nanostructures
Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in the resonant case. It is shown that the intensity and width of peaks in the tunneling conductivity is strongly influenced by nonequilibrium effects.
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