在柔性衬底上使用金属氧化物tft的1m2以下电容耦合薄膜id标签

N. Papadopoulos, S. Smout, M. Willegems, Marc Ameys, Ganesh Rathinavel, G. Beeckman, J. Stuijt, K. Myny
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引用次数: 2

摘要

本文提出了一种基于柔性薄膜衬底的电容耦合射频识别标签。标签的天线是单片集成的“片上”。标签的占地面积由天线的大小定义,1平方米。标签在24V的读卡器电压下工作,频率为1MHz。实现的薄膜标签数据传输速度为5.8kbps。该技术是一种单极铟镓锌氧化物(IGZO)自对准晶体管结构。
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1cm2 sub-1V Capacitive-Coupled Thin Film ID-Tag using Metal-oxide TFTs on Flexible Substrate
In this paper a capacitive coupled radio-frequency identification tag fabricated on flexible thin-film substrate is presented. The antenna of the tag is monolithic integrated “on-chip”. The footprint of the tag is defined by the size of the antenna, 1cm2. The tag operated at 24V applied reader voltage at a frequency of 1MHz. The achieved data transmission speed of the thin-film tag is 5.8kbps. The technology is a unipolar indium gallium zinc oxide (IGZO) self-aligned transistor architecture.
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