一个基于0.53pJK2 7000μm2电阻的温度传感器,误差为±0.35°C (3σ)

Woojun Choi, Yongtae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, J. Chun, K. Makinwa, Youngcheol Chae
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引用次数: 16

摘要

在微处理器和dram中,片上温度传感器是必不可少的组件,通过监测热梯度和热点来确保可靠性。这种传感器必须尽可能小,因为密集的热监测需要多个传感器。然而,传统的基于bjt的温度传感器与先进工艺的sub-1V电源不兼容。亚阈值mosfet可以在较低的电源下工作,但在高温下,它们的性能受到泄漏的限制[1,2]。热扩散率(TD)传感器可实现低于1v的工作,面积小,精度适中,但需要毫瓦功率。近年来,基于RC WienBridge (WB)滤波器的电阻传感器实现了高分辨率和高能效[4,5]。从根本上说,它们对工艺和电源电压缩放具有鲁棒性。然而,它们的读出电路一直基于连续时间(CT) ΔΣ adc或锁频环路(fll),这需要精确的模拟电路,并占用相当大的面积(>.7 mm2)。
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A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
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