Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850°C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.