潜在有机电子应用中噻吩/石墨烯界面特性

Mazmira Mohamad, R. Ahmed, A. Shaari, S. Goumri‐Said
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引用次数: 1

摘要

采用密度泛函理论方法对噻吩分子与石墨烯表面的界面进行了研究。为此,接口分离距离在1.00A到2.50A之间变化。我们报道的HOMO-LUMO的能隙值、吸附能和结合能表明分子间的力是由吸引的范德华力和泡利斥力积累而成的。随后注意到,即使分子和表面之间的界面分离距离发生相对较小的变化,分子间作用力的增长也非常敏感。在电子态密度中,发现噻吩/石墨烯体系的电子密度较大,并在费米能级出现自旋极化。此外,在靠近石墨烯表面的分子存在的情况下,观察到噻吩分子的轻微磁性行为,同时石墨烯表面的磁化强度降低。
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Thiophene/Graphene Interface Peculiarities for Potential Organic Electronic Applications
Interfacial study between thiophene molecule and graphene surface is presented by employing density functional theory methods. To do so, interfacing separation distance is varied from 1.00A to 2.50A. Our reported HOMO-LUMO energy gap values, adsorption energy as well as binding energy show the existence of intermolecular forces accumulated from the attractive van der Waals and Pauli repulsion forces. It is noted subsequently that the growing intermolecular forces are very sensitive even to relatively a small change in the interfacing separation distance between the molecule and surface. In the electronic density of states, dense electrons population of the thiophene/graphene system is found with appearance of spinpolarization at energy Fermi level. Moreover, a slight magnetic behaviour on thiophene molecule, accompanied by a decrease in the magnetization of graphene surface, is observed in the presence of the molecule near to the surface.
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