Ti-Zr-Ni准晶薄膜形成初期的特征

S. Malykhin, V. Kondratenko, I. Kopylets, S. Surovitskiy, I. Shipkova, I. Mikhailov, E. N. Zubarev, Yu. S. Bogdanov, Kyrpychova St. Kharkiv Ukraine
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引用次数: 5

摘要

采用x射线衍射、透射电镜和扫描显微镜等方法研究了Ti-Zr-Ni薄膜准晶相形成初期的特征。采用磁控溅射法制备了Ti41Zr38.3Ni20.7 (at)的靶材。%),在T300 K下沉积在衬底上,并进一步真空退火。结果表明,薄膜在沉积后立即呈x射线无定形、纳米结构。径向分布函数分析表明,在近原子介质中,沉积后立即以拓扑结构接近二十面体的无序团簇结构状态存在。结果表明,这些原子不是随机排列的,而是像伯格曼团簇的三层由二十面体和十二面体堆叠一样,形成了一种不完全有序的“过渡”结构。这样的结构是为进一步加热形成二十面体相而“准备”的核。对退火结果的分析表明,从伪非晶到准晶相转变的定性性质和转变的规模由退火时间和温度以及薄膜厚度决定。厚度越小,退火过程受到的抑制越大。结果表明,将厚度为6 μm以上的薄膜在500℃下退火28 h以上,可得到准晶参数aq约为0.5245 nm的单相准晶涂层。
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Features of the Initial Stage of the Formation of Ti-Zr-Ni Quasicrystalline Thin Films
Using the methods of X-ray diffraction, transmission and scanning microscopy, the features of the initial stage of the formation of the quasicrystalline phase in thin films of Ti-Zr-Ni are studied. The films were obtained by magnetron sputtering of a target of the composition Ti41Zr38.3Ni20.7 (at. %) with deposition on substrates at T  300 K and further vacuum annealing. It was established that immediately after deposition, the films are X-ray amorphous, nanostructured. An analysis of the radial distribution functions shows that immediately after deposition, the structural state of a disordered cluster, which is topologically close to icosahedral, prevails in the near atomic medium. It is concluded that the atoms are not arranged randomly, but form a “transitional” structure with an imperfect order like three shells of the Bergman cluster stacking using icosahedrons and dodecahedrons. Such a structure is a “prepared” nucleus for the further formation of the icosahedral phase upon heating. An analysis of the annealing results suggests that the qualitative nature of the transition from the pseudo-amorphous to the quasicrystalline phase and the scale of the transformations are determined by the annealing time and temperature, as well as by the film thickness. The smaller the thickness, the more the annealing processes are inhibited. It was shown that by annealing the films of a thickness of 6 μm or more at 500 C for more than 28 h, single-phase quasicrystalline coatings with a quasicrystallinity parameter aq of about 0.5245 nm can be obtained.
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