控制电迁移的补救措施:碳纳米管掺杂Sn-Ag-Cu互连的影响

Sha Xu, Xiaoxin Zhu, H. Kotadia, Hua Lu, S. Mannan, C. Bailey, Y. Chan
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引用次数: 3

摘要

电迁移是电子工业中一个重要的可靠性问题,特别是随着微电子特征尺寸的缩小和缩小,电迁移导致电流密度逐渐增大。本文采用碳纳米管(CNT)掺杂。碳纳米管具有很高的电迁移阻力。在我们的工作中,碳纳米管掺杂与SAC互连相结合。表面活性剂后的碳纳米管将被纳入SAC焊料互连中。实验中发现了最佳的碳纳米管掺杂比例,并且通过SEM图像可以观察到更好的电迁移可靠性。此外,通过计算研究改善了剪切应力分布,使其具有更好的力学性能。实验与数值研究相结合是本研究的重点。
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Remedies to control electromigration: Effects of CNT doped Sn-Ag-Cu interconnects
Electromigration is a critical reliability problem in electronic industry, especially with the shrinkage and downscaling of microelectronic feature size, which results in gradual increase of current density. Carbon nanotube(CNT) doping is adopted in this paper. CNT has demonstrated high electromigration resistance. In our work, CNT doping is combined with SAC interconnects. A CNT after surfactant will be incorporated into SAC solder interconnection. Best percentage of CNT doping is found from this experiment, and better electromigration reliability can be observed from this work by SEM image. Moreover, the shear stress distribution is improved using computational study, which shows better mechanical properties. The combination of experimental and numerical study is highlighted in this work.
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Parasitic electrical and electromagnetic effects Heat management Passive electronic components Interconnection technology Reliability and maintainability
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