硅光子器件的直接热光调谐(会议报告)

P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso
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摘要

由于其高克尔非线性和低线性吸收,硅是中红外(3至5微米)光学器件(如微谐振器)的首选材料。在这个波长范围内,现有的光源如量子级联激光器具有有限的可调性。调整硅的折射率可以通过芯片的温度变化来实现,并且已经在使用集成加热器或热电元件的环形谐振器上进行了演示。我们提出了一种直接利用工作在450 nm的激光二极管的光对硅器件进行热光学调谐的新方法。聚焦在硅上的蓝光引起局部温度升高,因此局部折射率增加。将该方法应用于硅环谐振器时,温度升高导致自由光谱范围减小,从而使谐振向低频偏移。在4.5 μ m处,我们测量到每兆瓦入射光的调谐效率为200 MHz。热光效应的数值模拟表明了该调谐方法的局部性,并证实了实验结果。最后对该方法的响应进行了频率研究,并测量了微秒级的时间常数。总之,我们提出了一种快速、局部和非侵入性的调谐中红外硅谐振器的方法,该方法可以扩展到任何硅基器件。
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Direct thermo-optical tuning of silicon photonic devices (Conference Presentation)
Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.
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