P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso
{"title":"硅光子器件的直接热光调谐(会议报告)","authors":"P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso","doi":"10.1117/12.2510421","DOIUrl":null,"url":null,"abstract":"Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"20 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct thermo-optical tuning of silicon photonic devices (Conference Presentation)\",\"authors\":\"P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso\",\"doi\":\"10.1117/12.2510421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.\",\"PeriodicalId\":21725,\"journal\":{\"name\":\"Silicon Photonics XIV\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon Photonics XIV\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2510421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon Photonics XIV","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2510421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct thermo-optical tuning of silicon photonic devices (Conference Presentation)
Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.