Mid-infrared (MIR) region is an important region for sensing applications because it contains vibrational resonance for many gases such as methane, carbon monoxide, carbon dioxide, sulfuric acid, ammonia, and acetone. Doped silicon with negative permittivity in MIR region can be used in plasmonic technology to design gas sensors which combining both benefits of silicon and plasmonic technology in MIR region. Fabricating plasmonic integrated devices became easier with current progress in Nanotechnology. Small foot print could be achieved by using Plasmonics technology. Additionally, silicon is CMOS compatible, tunable, and it has high mobility. In this paper we proposed a Fabry-Perot resonator made of doped silicon. Moreover, we studied the response of the Fabry-Perot resonator as a gas sensor in the presence of air, methane and carbon dioxide gases. Consequently, the sensitivity, quality factor and the figure of merit are calculated.
{"title":"Gas sensing devices using doped silicon material at mid-infrared region","authors":"Sarah Shafaay, M. Swillam","doi":"10.1117/12.2509876","DOIUrl":"https://doi.org/10.1117/12.2509876","url":null,"abstract":"Mid-infrared (MIR) region is an important region for sensing applications because it contains vibrational resonance for many gases such as methane, carbon monoxide, carbon dioxide, sulfuric acid, ammonia, and acetone. Doped silicon with negative permittivity in MIR region can be used in plasmonic technology to design gas sensors which combining both benefits of silicon and plasmonic technology in MIR region. Fabricating plasmonic integrated devices became easier with current progress in Nanotechnology. Small foot print could be achieved by using Plasmonics technology. Additionally, silicon is CMOS compatible, tunable, and it has high mobility. In this paper we proposed a Fabry-Perot resonator made of doped silicon. Moreover, we studied the response of the Fabry-Perot resonator as a gas sensor in the presence of air, methane and carbon dioxide gases. Consequently, the sensitivity, quality factor and the figure of merit are calculated.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83107402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiajiu Zheng, A. Khanolkar, Peipeng Xu, S. Colburn, S. Deshmukh, J. Myers, J. Frantz, E. Pop, J. Hendrickson, J. Doylend, N. Boechler, A. Majumdar
With silicon photonics going fabless, large-scale silicon photonic integrated circuits (PICs) have recently become a reality. Many of these PICs feature system reconfigurability to benefit from the cost-effective mass manufacture of a universal platform. However, reconfigurable silicon PICs relying on the weak, volatile thermo-optic or electro-optic effect of silicon usually suffer from a large footprint and energy consumption. Recently, phase-change materials have shown great promise for energy-efficient, ultra-compact and ultra-fast non-volatile integrated photonic applications. Here, by integrating phase-change materials, Ge2Sb2Te5 (GST) with silicon microring resonators, we demonstrate a non-volatile, programmable, energy-efficient, and compact platform over the telecommunication range. By measuring and fitting the output spectra of the microrings covered with various lengths of GST in the amorphous and crystalline states, we characterize the strong broadband attenuation (~7.3 dB/μm) and optical phase (~0.70 nm/μm) modulation effects of the platform. By adjusting the energy and number of free-space laser pulses applied to the GST, we perform reversible and quasi-continuous tuning of the GST state, and the subsequent tuning of the attenuation and resonance of the microring resonators enabled by the thermo-optically-induced phase changes. Designed to achieve near critical coupling of the microring resonators when the GST is in the amorphous state, a non-volatile 1×1 optical switch with high extinction ratio as large as 33 dB is demonstrated. Our research constitutes the first step towards future large-scale programmable silicon PICs. With appropriate design, a broadband low-loss 2×2 optical switch could be electrically controlled which would be the building block for a future non-volatile routing network and optical FPGA. Reference: J. J. Zheng, A. Khanolkar, P. P. Xu, S. Deshmukh, J. Myers, J. Frantz, E. Pop, J. Hendrickson, J. Doylend, N. Boechler, and A. Majumdar, "GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform," Opt. Mater. Express 8(6), 1551-1561 (2018).
随着硅光子学走向无晶圆厂，大规模硅光子集成电路(PICs)最近成为现实。这些pic中的许多具有系统可重构性，从而受益于通用平台的低成本批量生产。然而，依赖于硅的弱的、易失的热光或电光效应的可重构硅PICs通常会遭受较大的占地面积和能量消耗。近年来，相变材料在节能、超紧凑、超快速的非易失性集成光子应用中显示出巨大的前景。在这里，通过将相变材料Ge2Sb2Te5 (GST)与硅微环谐振器集成，我们展示了一种非易失性，可编程，节能且紧凑的电信范围平台。通过测量和拟合覆盖不同长度GST的微环在无定形和晶体状态下的输出光谱，我们表征了平台的强宽带衰减(~7.3 dB/μm)和光相位(~0.70 nm/μm)调制效应。通过调节施加在GST上的自由空间激光脉冲的能量和数量，我们实现了GST状态的可逆和准连续调谐，并通过热光诱导的相位变化实现了微环谐振器的衰减和共振。为了在GST处于非晶状态时实现微环谐振腔的近临界耦合，设计了一种消光比高达33 dB的非易失性1×1光开关。我们的研究是迈向未来大规模可编程硅pic的第一步。通过适当的设计，宽带低损耗2×2光开关可以被电控，这将成为未来非易失性路由网络和光学fpga的基石。J. Zheng, a . Khanolkar, P. P. Xu, S. Deshmukh, J. Myers, J. Frantz, E. Pop, J. Hendrickson, J. Doylend, N. Boechler, a . Majumdar，“GST-on-silicon混合纳米光子集成电路:一种非易失性准连续可编程平台，”光学学报。快报8(6)，1551-1561(2018)。
{"title":"Non-volatile quasi-continuously programmable silicon photonics using phase-change materials (Conference Presentation)","authors":"Jiajiu Zheng, A. Khanolkar, Peipeng Xu, S. Colburn, S. Deshmukh, J. Myers, J. Frantz, E. Pop, J. Hendrickson, J. Doylend, N. Boechler, A. Majumdar","doi":"10.1117/12.2507657","DOIUrl":"https://doi.org/10.1117/12.2507657","url":null,"abstract":"With silicon photonics going fabless, large-scale silicon photonic integrated circuits (PICs) have recently become a reality. Many of these PICs feature system reconfigurability to benefit from the cost-effective mass manufacture of a universal platform. However, reconfigurable silicon PICs relying on the weak, volatile thermo-optic or electro-optic effect of silicon usually suffer from a large footprint and energy consumption. Recently, phase-change materials have shown great promise for energy-efficient, ultra-compact and ultra-fast non-volatile integrated photonic applications. Here, by integrating phase-change materials, Ge2Sb2Te5 (GST) with silicon microring resonators, we demonstrate a non-volatile, programmable, energy-efficient, and compact platform over the telecommunication range. By measuring and fitting the output spectra of the microrings covered with various lengths of GST in the amorphous and crystalline states, we characterize the strong broadband attenuation (~7.3 dB/μm) and optical phase (~0.70 nm/μm) modulation effects of the platform. By adjusting the energy and number of free-space laser pulses applied to the GST, we perform reversible and quasi-continuous tuning of the GST state, and the subsequent tuning of the attenuation and resonance of the microring resonators enabled by the thermo-optically-induced phase changes. Designed to achieve near critical coupling of the microring resonators when the GST is in the amorphous state, a non-volatile 1×1 optical switch with high extinction ratio as large as 33 dB is demonstrated. Our research constitutes the first step towards future large-scale programmable silicon PICs. With appropriate design, a broadband low-loss 2×2 optical switch could be electrically controlled which would be the building block for a future non-volatile routing network and optical FPGA. Reference: J. J. Zheng, A. Khanolkar, P. P. Xu, S. Deshmukh, J. Myers, J. Frantz, E. Pop, J. Hendrickson, J. Doylend, N. Boechler, and A. Majumdar, \"GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform,\" Opt. Mater. Express 8(6), 1551-1561 (2018).","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"36 1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81209773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Singaravelu, G. Devarapu, Sharon M. Butler, A. Liles, R. Sheehan, L. O’Faolain, S. Hegarty, A. Bakoz
{"title":"Photonic crystal laser with an integrated modulator for optical interconnects (Conference Presentation)","authors":"P. Singaravelu, G. Devarapu, Sharon M. Butler, A. Liles, R. Sheehan, L. O’Faolain, S. Hegarty, A. Bakoz","doi":"10.1117/12.2509813","DOIUrl":"https://doi.org/10.1117/12.2509813","url":null,"abstract":"","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91058046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Heidari, Xiaochuan Xu, Chi-Jui Chung, Ray T. Chen
The temperature of earth depends upon the balance between the energy enterring and leaving the planet. The dynamic balance has been broken by the drastical increase of greenhouse gases generated by human activities during the past 150 years. Thus, monitoring of the global emission of greenhouse gases is urgent for human beings. Fourier transform spectroscopy (FTS) in infrared wavelength range is an effective measure for this purpose. An infrared spectrum represents a fingerprint of a material with absorption peaks corresponding to the vibration of the bonds of the atoms making up the material. Because each material is a unique combination of atoms, no two compounds produce the exact same infrared spectrum. Therefore, infrared spectroscopy can result in a positive identification (qualitative analysis) of every kind of materials. In addition, the size of the peaks in the spectrum is a direct indication of the amount of material present. Compared to dispersive optics or filter based spectroscopy approaches, FTS has a few significant advantages, such as high throughput, high signal-to-noise ratio, and high sensitivity. However, the size, weight and free space optics components make FTS a laboratory only instrument demanding extensive human involvement. In this paper, we report a demonstration of an on-chip Fourier transform spectrometer near 3.3 μm wavelength on silicon-on-sapphire. Propagation loss of 5.2 dB/cm has been experimentally demonstrated for strip waveguides. The on-chip FTS comprises an array of Mach–Zehnder interferometers (MZIs) with linearly increased optical path differences. The recovery of the spectrum of an inter-band cascaded laser has been demonstrated.
{"title":"On-chip Fourier transform spectrometer on silicon-on-sapphire (Conference Presentation)","authors":"E. Heidari, Xiaochuan Xu, Chi-Jui Chung, Ray T. Chen","doi":"10.1117/12.2510519","DOIUrl":"https://doi.org/10.1117/12.2510519","url":null,"abstract":"The temperature of earth depends upon the balance between the energy enterring and leaving the planet. The dynamic balance has been broken by the drastical increase of greenhouse gases generated by human activities during the past 150 years. Thus, monitoring of the global emission of greenhouse gases is urgent for human beings.\u0000Fourier transform spectroscopy (FTS) in infrared wavelength range is an effective measure for this purpose. An infrared spectrum represents a fingerprint of a material with absorption peaks corresponding to the vibration of the bonds of the atoms making up the material. Because each material is a unique combination of atoms, no two compounds produce the exact same infrared spectrum. Therefore, infrared spectroscopy can result in a positive identification (qualitative analysis) of every kind of materials. In addition, the size of the peaks in the spectrum is a direct indication of the amount of material present. Compared to dispersive optics or filter based spectroscopy approaches, FTS has a few significant advantages, such as high throughput, high signal-to-noise ratio, and high sensitivity. However, the size, weight and free space optics components make FTS a laboratory only instrument demanding extensive human involvement. \u0000In this paper, we report a demonstration of an on-chip Fourier transform spectrometer near 3.3 μm wavelength on silicon-on-sapphire. Propagation loss of 5.2 dB/cm has been experimentally demonstrated for strip waveguides. The on-chip FTS comprises an array of Mach–Zehnder interferometers (MZIs) with linearly increased optical path differences. The recovery of the spectrum of an inter-band cascaded laser has been demonstrated.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84220081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. García-Blanco, C. I. V. Emmerik, J. Mu, M. Goede, M. Dijkstra, Lantian Chang
Amorphous Al2O3 is an attractive material for integrated photonics, providing both active and passive functionalities. Al2O3 exhibits high solubility for rare-earth ions with moderate quenching of luminescence, a wide transparency window (150-7000 nm) and low propagation loss. It is therefore a very attractive material for visible, near- and mid-IR on-chip active devices. We have developed two different integration procedures to integrate Al2O3 onto passive photonic platforms. A double photonic layer integration scheme permits the low-loss integration of rare-earth ion doped Al2O3 onto the Si3N4 photonic platform. A single photonic layer integration scheme, based on the photonic damascene process, permits the creation of active and passive regions at the same level on a wafer, with the consequent reduction of the number of fabrication steps compared to the vertical integration of two materials. On-chip amplifiers on Si3N4 with more than 10 dB of net gain at 1550 nm as well as the realization of narrow linewidth lasers on active-passive Al2O3 for label-free sensing applications will be discussed.
{"title":"On-chip amplifiers and lasers on the Al2O3 integrated photonics platform (Conference Presentation)","authors":"S. García-Blanco, C. I. V. Emmerik, J. Mu, M. Goede, M. Dijkstra, Lantian Chang","doi":"10.1117/12.2509962","DOIUrl":"https://doi.org/10.1117/12.2509962","url":null,"abstract":"Amorphous Al2O3 is an attractive material for integrated photonics, providing both active and passive functionalities. Al2O3 exhibits high solubility for rare-earth ions with moderate quenching of luminescence, a wide transparency window (150-7000 nm) and low propagation loss. It is therefore a very attractive material for visible, near- and mid-IR on-chip active devices.\u0000We have developed two different integration procedures to integrate Al2O3 onto passive photonic platforms. A double photonic layer integration scheme permits the low-loss integration of rare-earth ion doped Al2O3 onto the Si3N4 photonic platform. A single photonic layer integration scheme, based on the photonic damascene process, permits the creation of active and passive regions at the same level on a wafer, with the consequent reduction of the number of fabrication steps compared to the vertical integration of two materials. On-chip amplifiers on Si3N4 with more than 10 dB of net gain at 1550 nm as well as the realization of narrow linewidth lasers on active-passive Al2O3 for label-free sensing applications will be discussed.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72781513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Modern sub-28nm CMOS process nodes, namely FinFET and thin-body silicon-on-insulator have front-end layer thicknesses that are too thin to confine an optical mode. Integration of silicon photonics in these nodes necessitates the development of a deposition process that forms the waveguide structures with sufficient geometries after the CMOS front-end processing. As a step toward creating a photonics process module that can be added to these nodes, we demonstrate the integration of deposited polysilicon photonic platform in a low-power 65nm bulk CMOS process node in a 12” wafer foundry. This process module is designed with minimal number of additional masks to control the fabrication costs by optimizing the fabrication steps and reusing original process’s mask set (~5 additional masks among +40 masks required for the state-of-the-art CMOS nodes). The center of the platform is a polysilicon deposition step, which creates the waveguide layer, followed by a low-temperature crystallization process, which does not impact the electronics. All the passive and active photonic devices are fabricated by patterning and doping this layer. Transistor’s source/drain doping implantations are postponed after finishing and doping photonic polysilicon in order to avoid affecting transistors and reusing the implantation masks for doping active photonic devices as well. The waveguide loss ranges from 10-20dB/cm at 1310nm wavelength. To ease the loss optimization at wafer-scale, deep trench isolation has been added in photonic rows to optically isolate photonics from lossy silicon bulk. Grating couplers are used to couple in/out the light into the chip with 5dB loss. Micro-ring depletion-mode modulators achieved Q-factors of >5k and ~1.6THz free spectral range (FSR) enabling 10 channels in DWDM links. Resonant defect-based photodetectors are utilized on the receive side with 10% quantum efficiency at 5V reverse bias. Our first system demonstrations in this platform are O-band wavelength division multiplexed (WDM) optical transceivers using ring-resonators. Chips are designed in a modular fashion with 64 transceiver macros supporting 4 stand-alone transmit and receive WDM rows each with up to 16 individual channels. Each macro contains about 0.5 million transistors including transceiver’s analog custom front-ends, a digital backend, and microrings’ thermal tuners synthesized by original CMOS technology’s IP standard cells. We have used a variety of available transistor types with different oxide-thicknesses and threshold voltages to optimize energy-efficiency of the electronics. We have characterized the transistor performance across the die and wafer by measuring the frequency of the ring-oscillators embedded in each macro, and observed that the normal distribution is consistent with the foundry provided models for the native CMOS process. Electronics are operating using nominal supply voltage of 1.2V. We achieved 10Gb/s transmission with 4.7dB extinction ratio, and b
{"title":"Bulk CMOS photonic/electronic integration (Conference Presentation)","authors":"V. Stojanović","doi":"10.1117/12.2513369","DOIUrl":"https://doi.org/10.1117/12.2513369","url":null,"abstract":"Modern sub-28nm CMOS process nodes, namely FinFET and thin-body silicon-on-insulator have front-end layer thicknesses that are too thin to confine an optical mode. Integration of silicon photonics in these nodes necessitates the development of a deposition process that forms the waveguide structures with sufficient geometries after the CMOS front-end processing. As a step toward creating a photonics process module that can be added to these nodes, we demonstrate the integration of deposited polysilicon photonic platform in a low-power 65nm bulk CMOS process node in a 12” wafer foundry. This process module is designed with minimal number of additional masks to control the fabrication costs by optimizing the fabrication steps and reusing original process’s mask set (~5 additional masks among +40 masks required for the state-of-the-art CMOS nodes).\u0000The center of the platform is a polysilicon deposition step, which creates the waveguide layer, followed by a low-temperature crystallization process, which does not impact the electronics. All the passive and active photonic devices are fabricated by patterning and doping this layer. Transistor’s source/drain doping implantations are postponed after finishing and doping photonic polysilicon in order to avoid affecting transistors and reusing the implantation masks for doping active photonic devices as well. The waveguide loss ranges from 10-20dB/cm at 1310nm wavelength. To ease the loss optimization at wafer-scale, deep trench isolation has been added in photonic rows to optically isolate photonics from lossy silicon bulk. Grating couplers are used to couple in/out the light into the chip with 5dB loss. Micro-ring depletion-mode modulators achieved Q-factors of >5k and ~1.6THz free spectral range (FSR) enabling 10 channels in DWDM links. Resonant defect-based photodetectors are utilized on the receive side with 10% quantum efficiency at 5V reverse bias.\u0000Our first system demonstrations in this platform are O-band wavelength division multiplexed (WDM) optical transceivers using ring-resonators. Chips are designed in a modular fashion with 64 transceiver macros supporting 4 stand-alone transmit and receive WDM rows each with up to 16 individual channels. Each macro contains about 0.5 million transistors including transceiver’s analog custom front-ends, a digital backend, and microrings’ thermal tuners synthesized by original CMOS technology’s IP standard cells. We have used a variety of available transistor types with different oxide-thicknesses and threshold voltages to optimize energy-efficiency of the electronics. We have characterized the transistor performance across the die and wafer by measuring the frequency of the ring-oscillators embedded in each macro, and observed that the normal distribution is consistent with the foundry provided models for the native CMOS process. Electronics are operating using nominal supply voltage of 1.2V. We achieved 10Gb/s transmission with 4.7dB extinction ratio, and b","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78228813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Frankis, Dawson B. Bonneville, Daniel Su, J. Bradley
Tellurite glasses have promising material properties in applications for linear and nonlinear integrated optical devices. Tellurite glasses have high rare earth solubilities for applications in rare earth doped lasers as well as high nonlinear refractive indices, Raman gain coefficients and acousto-optic figures of merit. However, it is difficult to take advantage of tellurite glass properties in silicon photonics, as the waveguiding materials available for use in silicon photonic devices are typically limited to silicon, silicon dioxide, silicon nitride, and germanium. Here, we report on a tellurium oxide whispering gallery resonator, integrated onto a silicon photonic chip and coupled to a silicon waveguide. The silicon waveguides are fabricated using a standard foundry process and the cladding oxide is etched in a ring shape with precise alignment to the bus waveguides at gaps from 0.2 to 1.0 μm to form the cavity. Post processing deposition of a tellurium oxide film coats the bottom of the etched oxide cavity, forming a tellurium oxide waveguiding layer, into which light can be coupled from the silicon waveguide. A resonator with a radius of 40 μm and a 1.1-μm-thick tellurium oxide coating is measured to have an internal Q-factor of greater than 1E5. These results illustrate the potential for integration of tellurite glass devices into silicon photonic microsystems. Applications of this cavity structure in optical sensing, design considerations and methods to improve performance will be discussed.
{"title":"Silicon waveguide integrated with a tellurium oxide whispering gallery resonator on chip (Conference Presentation)","authors":"H. Frankis, Dawson B. Bonneville, Daniel Su, J. Bradley","doi":"10.1117/12.2511349","DOIUrl":"https://doi.org/10.1117/12.2511349","url":null,"abstract":"Tellurite glasses have promising material properties in applications for linear and nonlinear integrated optical devices. Tellurite glasses have high rare earth solubilities for applications in rare earth doped lasers as well as high nonlinear refractive indices, Raman gain coefficients and acousto-optic figures of merit. However, it is difficult to take advantage of tellurite glass properties in silicon photonics, as the waveguiding materials available for use in silicon photonic devices are typically limited to silicon, silicon dioxide, silicon nitride, and germanium. Here, we report on a tellurium oxide whispering gallery resonator, integrated onto a silicon photonic chip and coupled to a silicon waveguide. The silicon waveguides are fabricated using a standard foundry process and the cladding oxide is etched in a ring shape with precise alignment to the bus waveguides at gaps from 0.2 to 1.0 μm to form the cavity. Post processing deposition of a tellurium oxide film coats the bottom of the etched oxide cavity, forming a tellurium oxide waveguiding layer, into which light can be coupled from the silicon waveguide. A resonator with a radius of 40 μm and a 1.1-μm-thick tellurium oxide coating is measured to have an internal Q-factor of greater than 1E5. These results illustrate the potential for integration of tellurite glass devices into silicon photonic microsystems. Applications of this cavity structure in optical sensing, design considerations and methods to improve performance will be discussed.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78699940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sharon M. Butler, P. Singaravelu, A. Bakoz, A. Liles, B. O'Shaughnessy, E. Viktorov, L. O’Faolain, S. Hegarty
The ever decreasing demand for bandwidth in optical communications has made silicon photonics one of the promising technologies as it can dramatically reduce energy consumption and footprint in photonic integrated circuits (PIC). Many research efforts have aimed to incorporate silicon into the PIC platform by using it as a resonant reflector in the form of a microdisk, racetrack resonator, ring resonator or photonic crystal (PhC) cavity. Tuning of these devices allow for modulation of the lasing frequency by means of the electro-optic or thermo-optic effect. Our solution utilises a III-V hybrid laser with a reflective semiconductor optical amplifier (RSOA) and a PhC cavity resonant reflector. Current research shows electro-optical modulation of a PN junction on the Si-reflector as a means of tuning the reflectance wavelength. This work focuses on the thermo-optical effect in silicon to achieve modulation of the lasing frequency. Modulation of the current to the PN junction on the Si-reflector of the external cavity laser will change the refractive index which will tune the reflectance wavelength and hence modulate the lasing frequency. PhC cavities are smaller in area than a typical ring resonator and have larger free spectral range that results in less severe mode competition effects. For trace gas detection a frequency modulated laser scanned across the absorption frequency of the target gas will result in change in the output power of the laser. The PhC laser we demonstrate shows to have a very small intensity modulation (IM) on the output offering it as an ideal candidate for this application. Experimental results show the laser to have a threshold current of 15 mA with output optical power of 300 µW. With an applied heating power of 25 mW, a frequency shift of 10 GHz was observed. At a modulation frequency of 10 kHz, a modulation depth of 2 GHz was observed.
{"title":"Direct frequency modulation of photonic crystal laser by thermal tuning with low-intensity modulation (Conference Presentation)","authors":"Sharon M. Butler, P. Singaravelu, A. Bakoz, A. Liles, B. O'Shaughnessy, E. Viktorov, L. O’Faolain, S. Hegarty","doi":"10.1117/12.2509729","DOIUrl":"https://doi.org/10.1117/12.2509729","url":null,"abstract":"The ever decreasing demand for bandwidth in optical communications has made silicon photonics one of the promising technologies as it can dramatically reduce energy consumption and footprint in photonic integrated circuits (PIC). Many research efforts have aimed to incorporate silicon into the PIC platform by using it as a resonant reflector in the form of a microdisk, racetrack resonator, ring resonator or photonic crystal (PhC) cavity. Tuning of these devices allow for modulation of the lasing frequency by means of the electro-optic or thermo-optic effect.\u0000Our solution utilises a III-V hybrid laser with a reflective semiconductor optical amplifier (RSOA) and a PhC cavity resonant reflector. Current research shows electro-optical modulation of a PN junction on the Si-reflector as a means of tuning the reflectance wavelength. This work focuses on the thermo-optical effect in silicon to achieve modulation of the lasing frequency. Modulation of the current to the PN junction on the Si-reflector of the external cavity laser will change the refractive index which will tune the reflectance wavelength and hence modulate the lasing frequency. PhC cavities are smaller in area than a typical ring resonator and have larger free spectral range that results in less severe mode competition effects.\u0000For trace gas detection a frequency modulated laser scanned across the absorption frequency of the target gas will result in change in the output power of the laser. The PhC laser we demonstrate shows to have a very small intensity modulation (IM) on the output offering it as an ideal candidate for this application. \u0000Experimental results show the laser to have a threshold current of 15 mA with output optical power of 300 µW. With an applied heating power of 25 mW, a frequency shift of 10 GHz was observed. At a modulation frequency of 10 kHz, a modulation depth of 2 GHz was observed.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87066081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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