采用气桥场极板和斜场极板提高双通道AlGaN/GaN HEMT的断态击穿电压

Solid State Electronics Letters Pub Date : 2020-12-01 DOI:10.1016/j.ssel.2020.10.002

Yang-Hua Chang, Jyun-Jhih Wang, Gui-Lin Shen

{"title":"采用气桥场极板和斜场极板提高双通道AlGaN/GaN HEMT的断态击穿电压","authors":"Yang-Hua Chang, Jyun-Jhih Wang, Gui-Lin Shen","doi":"10.1016/j.ssel.2020.10.002","DOIUrl":null,"url":null,"abstract":"<div><p>The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a slant field plate can be added to obtain an even better result. The breakdown voltage is increased from 19 V of the initial structure to 200 V of the optimized structure.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"2 ","pages":"Pages 92-97"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2020.10.002","citationCount":"4","resultStr":"{\"title\":\"Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate\",\"authors\":\"Yang-Hua Chang, Jyun-Jhih Wang, Gui-Lin Shen\",\"doi\":\"10.1016/j.ssel.2020.10.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a slant field plate can be added to obtain an even better result. The breakdown voltage is increased from 19 V of the initial structure to 200 V of the optimized structure.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"2 \",\"pages\":\"Pages 92-97\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2020.10.002\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208820300211\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208820300211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用气桥场板(AFP)和斜场板在栅极处，提高了双通道AlGaN/GaN HEMT的失态击穿电压。观察到，仅使用AFP可以在一定程度上降低栅极边缘下的峰值电场，并且可以添加一个倾斜的场板以获得更好的效果。击穿电压由初始结构的19 V提高到优化结构的200 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a slant field plate can be added to obtain an even better result. The breakdown voltage is increased from 19 V of the initial structure to 200 V of the optimized structure.

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Solid State Electronics Letters

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