超低功耗应用的深亚阈值肖特基势垒IGZO TFT

Abhijeet Barua , Kevin D. Leedy , Rashmi Jha
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引用次数: 7

摘要

本研究报道了具有肖特基势垒源/漏触点的低热收支铟镓锌氧化物(IGZO)薄膜晶体管(TFTs)的深亚阈值特性(≤1 V)。对肖特基势垒进行了分析,并在器件之间观察到一致的理想因子。从标称特征中提取了深亚阈值区域,并在低压区域观察了势垒影响。这种操作导致高输出阻抗(~1012Ω)和优异的跨导,导致高电压增益(>100),由于输出特性的硬饱和。正偏压应力和稳定性测试在这个区域内进行,显示最小漂移的转移特性。这些特性使这些器件成为低功耗深亚阈值和弱信号应用的绝佳选择。
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Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications

This study reports the deep subthreshold characteristics (≤1 V) of low thermal budget Indium Gallium Zinc Oxide (IGZO) thin film transistors (TFTs) with Schottky barrier source/drain contacts. The Schottky barrier was analyzed and a consistent ideality factor was observed across the devices. A deep subthreshold region was extracted from the nominal characteristics and barrier influence was observed in the low voltage region. This operation led to high output impedance (~1012Ω) and excellent trans-conductance leading to a high voltage gain (>100) due to hard saturation of the output characteristics. Positive bias stress and stability tests were conducted within this region that showed minimal drift in the transfer characteristics. Such characteristics make these devices an excellent choice for low-power deep subthreshold and weak signal applications.

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