ZnO1−xSx作为窗口层在碲化镉太阳能电池中的应用

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI:10.1109/PVSC.2010.5614592

J. Perrenoud, S. Buecheler, L. Kranz, C. Fella, J. Skarp, A. Tiwari

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引用次数: 8

摘要

采用超声喷雾热解法(USP)制备了具有ZnS窗层的CdTe太阳能电池。无增透涂层的太阳能电池电流密度达到24.7 mA/cm2 (Voc 594 mV, FF 64.2%， η 9.4%)。对于具有CdS和ZnS窗口层的CdTe太阳能电池，我们详细量化了Jsc损耗机制。为了调整导带取向，提高Voc，采用了原子层沉积(ALD)生长的ZnO1−xSx。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Application of ZnO1−xSx as window layer in cadmium telluride solar cells

CdTe solar cells with ZnS window layer deposited by ultrasonic spray pyrolysis (USP) were grown. The current density of such solar cells reached 24.7 mA/cm2 without anti reflection coating (Voc 594 mV, FF 64.2%, η 9.4%). For CdTe solar cells with CdS and ZnS window layers we quantified the Jsc loss mechanisms in detail. In order to tune the conduction band alignment, and increase the Voc, ZnO1−xSx grown by atomic layer deposition (ALD) was used.

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2010 35th IEEE Photovoltaic Specialists Conference

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