重掺杂硅中电子的谷间溢出

Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology Pub Date : 2000-06-27 DOI:10.1109/KORUS.2000.865934

E. A. Makarov, A. Sychev

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引用次数: 0

摘要

对n型硅导带极小值间电子溢出效应进行了计算机模拟。在方程数值解的基础上，得到了单轴大应变下费米能级位置与电子浓度在极小值处的中性关系。所得结果可用于模拟Ge/sub -x/ Si/sub -x/合金应变层中的载流子输运。

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Intervalley overflow of electrons in heavily doped silicon

A computer simulation of the effect of overflow of electrons between conduction band minima of n-type silicon is carried out. On the basis of the numerical solution of the equation, the neutrality association of Fermi level position and electron concentration in minima are obtained at major monoaxial strain. The obtained results can be used for simulation of charge carrier transport in strained layers of Ge/sub x/Si/sub 1-x/ alloys.

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Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology

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