R. Mariappan, V. Ponnuswamy, P. Jayamurugan, R. Jayaprakash, R. Suresh
{"title":"利用雾化器喷雾热解技术研究薄膜的结构、光学和电学性质","authors":"R. Mariappan, V. Ponnuswamy, P. Jayamurugan, R. Jayaprakash, R. Suresh","doi":"10.1155/2013/516812","DOIUrl":null,"url":null,"abstract":"thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD) analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM) studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX) reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.","PeriodicalId":13278,"journal":{"name":"Indian Journal of Materials Science","volume":"1 1","pages":"1-8"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Structural, Optical and Electrical Properties of Thin Films Using Nebulizer Spray Pyrolysis Technique\",\"authors\":\"R. Mariappan, V. Ponnuswamy, P. Jayamurugan, R. Jayaprakash, R. Suresh\",\"doi\":\"10.1155/2013/516812\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD) analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM) studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX) reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.\",\"PeriodicalId\":13278,\"journal\":{\"name\":\"Indian Journal of Materials Science\",\"volume\":\"1 1\",\"pages\":\"1-8\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Indian Journal of Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2013/516812\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2013/516812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural, Optical and Electrical Properties of Thin Films Using Nebulizer Spray Pyrolysis Technique
thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD) analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM) studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX) reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.