三维封装用高密度小尺寸硅孔阵列的制备及填充质量优化

Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma
{"title":"三维封装用高密度小尺寸硅孔阵列的制备及填充质量优化","authors":"Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma","doi":"10.1109/ICEPT.2016.7583206","DOIUrl":null,"url":null,"abstract":"High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"98 1","pages":"603-607"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication and filling quality optimization of the high density and small size through silicon via array for three-dimensional packaging\",\"authors\":\"Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma\",\"doi\":\"10.1109/ICEPT.2016.7583206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.\",\"PeriodicalId\":6881,\"journal\":{\"name\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"98 1\",\"pages\":\"603-607\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2016.7583206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2016.7583206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

高密度、小尺寸通孔硅正成为全球学术界和工业界研究和开发的热点。随着TSV直径减小到20微米以下,TSV的密度和尺寸往往受到深反应离子刻蚀工艺、TSV填充工艺等工艺的限制。本文通过对深反应离子刻蚀过程中TSV轮廓的控制,以及在TSV填充过程中考虑添加剂的影响,制备了高密度小尺寸TSV阵列(TSV直径约为20微米,TSV密度为90000针/平方厘米),并优化了其填充质量。所有测试结果验证了该高密度小尺寸硅通孔阵列用于三维封装的良好制造和填充质量。
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Fabrication and filling quality optimization of the high density and small size through silicon via array for three-dimensional packaging
High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.
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