Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma
{"title":"三维封装用高密度小尺寸硅孔阵列的制备及填充质量优化","authors":"Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma","doi":"10.1109/ICEPT.2016.7583206","DOIUrl":null,"url":null,"abstract":"High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"98 1","pages":"603-607"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication and filling quality optimization of the high density and small size through silicon via array for three-dimensional packaging\",\"authors\":\"Y. Guan, Qinghua Zeng, J. Chen, Wei Meng, Yufeng Jin, Shengli Ma\",\"doi\":\"10.1109/ICEPT.2016.7583206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.\",\"PeriodicalId\":6881,\"journal\":{\"name\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"98 1\",\"pages\":\"603-607\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2016.7583206\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2016.7583206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and filling quality optimization of the high density and small size through silicon via array for three-dimensional packaging
High density and small size through silicon via is becoming a research and development hotspot of global academia and industry. The density and size of TSV is often constraint with deep reactive ion etching process, TSV filling process and other process as the diameter of TSV decreases to below 20 micrometer or smaller. In this paper, high density and small size TSV array are fabricated (The diameter of TSV is about 20 micrometer, and the density of TSV is 90000 pins per square centimeter) and their corresponding filling quality are optimized through controlling the profile of TSV in deep reactive ion etching process and taking additives into consideration in TSV filling process. All test results verify the good fabrication and filling quality of this high density and small size through silicon via array for three-dimensional packaging.