纵向压电阻~ 4×10-8 Pa-1的自焊接金属催化碳纳米管压电阻

M. Tabib-Azar, Run Wang, Yan Xie, L. You
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引用次数: 2

摘要

首次将自焊双壁和多壁碳纳米管(DWCNT和MWCNT)桥用作纳米级压阻,用于监测硅悬臂梁的振动和变形。采用低压金属催化化学气相沉积技术在位于悬臂梁上的绝缘体上硅柱之间生长碳纳米管,这样当梁变形时,碳纳米管就会受到轴向应变。在这些轴向应变下发生的内碳纳米管圆柱体伸缩改变了碳纳米管的阻力。原子力显微镜测得碳纳米管焊缝强度大于100 nN/CNT,满量程电阻变化大于105 Ω。CNTs的有效纵向压阻率大于4×10-8 Pa-1,比Π44在硅中的有效纵向压阻率大10倍以上
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Self-Welded Metal-Catalyzed Carbon Nanotube Piezoresistors with Very Large Longitudinal Piezoresistivity of ~ 4×10-8 Pa-1
Self-welded double-wall and multi-wall carbon nanotube (DWCNT and MWCNT) bridges were used for the first time as nano-scale piezoresistors to monitor vibration and deformation of silicon cantilever beams. The CNTs were grown using low-pressure metal-catalyzed chemical vapor deposition technique between silicon-on-insulator posts situated over cantilever beams such that when the beams were deformed, CNTs were axially strained. Telescoping of inner CNT cylinders occurring under these axial strains changed the CNTs resistance. The CNT-post weld strength, as measured using atomic force microscope, was larger than 100 nN/CNT and their full-scale resistance change was larger than 105 Ω. The effective longitudinal piezoresistivity of CNTs was larger than 4×10-8 Pa-1 which is more than 10 times larger than that of Π44 in silicon
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