N. Biderman, S. Novak, T. Laursen, R. Matyi, R. Sundaramoorthy, Gary Dufresne, J. Wax, M. Gardner, D. Fobare, D. Metacarpa, P. Haldar, J. Lloyd
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Diffusion activation energy of cadmium in thin film CuInGaSe2
Diffusivity and activation energy of cadmium in copper indium gallium diselenide (CuInGaSe2 or CIGS) thin films were investigated by annealing solar-grade SLG/Mo/CIGS/CdS samples of two different CIGS thicknesses at temperatures between 150° C and 325° C. Diffusion profiles of cadmium volume and grain boundary were investigated by dual-beam time-of-flight secondary ion mass spectroscopy. A relationship between the cadmium's volume and grain boundary diffusion coefficients and their activation energies at a given annealing temperature was established using LeClaire's grain boundary diffusion model. The data also provide evidence that cadmium diffusion may be strongly modulated by a gallium gradient seen both laterally at the interface and in the bulk in solar-grade CIGS material.
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