石墨烯导线作为替代互连

I. Asselberghs, M. Politou, B. Sorée, S. Sayan, D. Lin, P. Pashaei, C. Huyghebaert, P. Raghavan, I. Radu, Z. Tokei
{"title":"石墨烯导线作为替代互连","authors":"I. Asselberghs, M. Politou, B. Sorée, S. Sayan, D. Lin, P. Pashaei, C. Huyghebaert, P. Raghavan, I. Radu, Z. Tokei","doi":"10.1109/IITC-MAM.2015.7325590","DOIUrl":null,"url":null,"abstract":"In this paper, we evaluate the material properties of graphene and compare with Cu in order to assess the potential application of graphene to replace copper wires in BEOL interconnects. Based on circuit and system-level simulations, high restrictions are imposed to graphene with respect to contact resistance and mean free path. Experimentally we measure, a mean-free-path (MFP) of ~150 nm, which exceeds the value for Cu. However, contact engineering will be the key issue for integration of graphene as interconnect.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"59 1","pages":"317-320"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Graphene wires as alternative interconnects\",\"authors\":\"I. Asselberghs, M. Politou, B. Sorée, S. Sayan, D. Lin, P. Pashaei, C. Huyghebaert, P. Raghavan, I. Radu, Z. Tokei\",\"doi\":\"10.1109/IITC-MAM.2015.7325590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we evaluate the material properties of graphene and compare with Cu in order to assess the potential application of graphene to replace copper wires in BEOL interconnects. Based on circuit and system-level simulations, high restrictions are imposed to graphene with respect to contact resistance and mean free path. Experimentally we measure, a mean-free-path (MFP) of ~150 nm, which exceeds the value for Cu. However, contact engineering will be the key issue for integration of graphene as interconnect.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"59 1\",\"pages\":\"317-320\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

在本文中,我们评估了石墨烯的材料性能,并与铜进行了比较,以评估石墨烯在BEOL互连中取代铜线的潜在应用。基于电路和系统级仿真,石墨烯在接触电阻和平均自由程方面受到了很高的限制。实验测量到的平均自由程(MFP)为~150 nm,超过了Cu的值。然而,接触工程将是集成石墨烯作为互连的关键问题。
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Graphene wires as alternative interconnects
In this paper, we evaluate the material properties of graphene and compare with Cu in order to assess the potential application of graphene to replace copper wires in BEOL interconnects. Based on circuit and system-level simulations, high restrictions are imposed to graphene with respect to contact resistance and mean free path. Experimentally we measure, a mean-free-path (MFP) of ~150 nm, which exceeds the value for Cu. However, contact engineering will be the key issue for integration of graphene as interconnect.
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