Effects of BiFeO3 thickness on the write‐once‐read‐many‐times resistive switching behavior of Pt/BiFeO3/LaNiO3 heterostructure

Thickness of the resistive switching materials is an essential factor to determine the integration density of resistive switching devices. In this work, we investigated the effect of the thickness of BFO on the WORM resistive switching behavior of Pt/BFO/LNO based devices. The thicknesses of BFO thin films are controlled in the range of 70‐220 nm. All the devices exhibited WORM resistive switching behavior with high ON/OFF ratio (∽10‐2‐10‐4), long term data retention (>3600 s), and reliable endurance (>1000 cycles). The set voltages (Vset) of the devices exhibit an approximately linear relation to the BFO thicknesses, while the highest ON/OFF ratio appears in the device with BFO thickness of 150 nm. The thickness dependent resistive switching characteristic is attributed to the variation of oxygen vacancies and OFF state resistances with the increase of BFO thickness. Our results underline the importance of the thickness of resistive switching materials for the future device applications.This article is protected by copyright. All rights reserved.