Li-Yin Gao, Li Liu, Zhi-Quan Liu, Jing Wang, Zhaoxia Zhou, Changqing Liu
{"title":"Ni-W-P和Ni-Fe复合材料在高温贮存过程中的扩散阻挡效应","authors":"Li-Yin Gao, Li Liu, Zhi-Quan Liu, Jing Wang, Zhaoxia Zhou, Changqing Liu","doi":"10.1109/ECTC.2017.51","DOIUrl":null,"url":null,"abstract":"The high temperature storage test (HTST) was conducted on the SnAgCu/Ni-W-P and Ni-Fe solder joints. While the conventional Ni-P solder joints were used as comparison to study the diffusion barrier effect of Ni-W-P and Ni-Fe under bump metallization (UBM). Both cross section and top view for the microstructural evolution of solder joints during 150°C aging were observed by the scanning electron microscope (SEM). After reflow, (Cu, Ni)6Sn5 in the forms of chunky and rod-like was formed with an average thickness of around 1µm in SAC/Ni-P solder joint. During the HTST, bulky (Cu, Ni)6Sn5 grains were formed with a 5µm in diameter due to the interconnections of multiple (Cu, Ni)6Sn5 grains. In terms of SAC/Ni-Fe solder joints, during the reflow process, FeSn2 layer and rod-like (Cu, Ni)6Sn5 grains were formed. During the aging at 150°C, rod-like dispersed (Cu, Ni)6Sn5 grains started to interconnect with each other which finally progressed into an outer IMC layer upon FeSn2 phase. In Ni-W-P solder joints, the morphology and composition of IMCs is similar to it in Ni-P solder joints. The thickness of (Cu, Ni)6Sn5 was much thicker during reflow but turned out to be below it in Ni-P solder joints after 120h aging. Experimentally, both Ni-W-P and Ni-Fe UBM show an excellent diffusion barrier effect to retard the Kirkendall voids formation compared to the conventional Ni-P UBM. Specifically, (Cu, Ni)6Sn5 were formed at the SnAgCu/ Ni-W-P interface with a total thickness around 2µm, while only a 1µm thick FeSn2 layer accompanying with several dispersing (Cu, Ni)6Sn5 grains outside were formed at the SnAgCu/Ni-Fe interface. The addition of Fe elements can dramatically supress the diffusion of Ni and the formation of Ni3Sn4, which shows superior diffusion barrier compared to Ni-P UBM. The addition of W into Ni-P significantly decreases the growth rate of the interfacial IMCs during the aging process, which shows potential for electronic devices operated under long-term aging process.","PeriodicalId":6557,"journal":{"name":"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)","volume":"19 1","pages":"1566-1571"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Diffusion Barrier Effect of Ni-W-P and Ni-Fe UBMs during High Temperature Storage\",\"authors\":\"Li-Yin Gao, Li Liu, Zhi-Quan Liu, Jing Wang, Zhaoxia Zhou, Changqing Liu\",\"doi\":\"10.1109/ECTC.2017.51\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high temperature storage test (HTST) was conducted on the SnAgCu/Ni-W-P and Ni-Fe solder joints. While the conventional Ni-P solder joints were used as comparison to study the diffusion barrier effect of Ni-W-P and Ni-Fe under bump metallization (UBM). Both cross section and top view for the microstructural evolution of solder joints during 150°C aging were observed by the scanning electron microscope (SEM). After reflow, (Cu, Ni)6Sn5 in the forms of chunky and rod-like was formed with an average thickness of around 1µm in SAC/Ni-P solder joint. During the HTST, bulky (Cu, Ni)6Sn5 grains were formed with a 5µm in diameter due to the interconnections of multiple (Cu, Ni)6Sn5 grains. In terms of SAC/Ni-Fe solder joints, during the reflow process, FeSn2 layer and rod-like (Cu, Ni)6Sn5 grains were formed. During the aging at 150°C, rod-like dispersed (Cu, Ni)6Sn5 grains started to interconnect with each other which finally progressed into an outer IMC layer upon FeSn2 phase. In Ni-W-P solder joints, the morphology and composition of IMCs is similar to it in Ni-P solder joints. The thickness of (Cu, Ni)6Sn5 was much thicker during reflow but turned out to be below it in Ni-P solder joints after 120h aging. Experimentally, both Ni-W-P and Ni-Fe UBM show an excellent diffusion barrier effect to retard the Kirkendall voids formation compared to the conventional Ni-P UBM. Specifically, (Cu, Ni)6Sn5 were formed at the SnAgCu/ Ni-W-P interface with a total thickness around 2µm, while only a 1µm thick FeSn2 layer accompanying with several dispersing (Cu, Ni)6Sn5 grains outside were formed at the SnAgCu/Ni-Fe interface. The addition of Fe elements can dramatically supress the diffusion of Ni and the formation of Ni3Sn4, which shows superior diffusion barrier compared to Ni-P UBM. 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引用次数: 2
摘要
对SnAgCu/Ni-W-P和Ni-Fe焊点进行了高温贮存试验。以传统的Ni-P焊点为对照,研究了凹凸金属化过程中Ni-W-P和Ni-Fe的扩散阻挡效应。利用扫描电子显微镜(SEM)观察了焊点在150℃时效过程中的组织演变过程。回流后,SAC/Ni- p焊点中形成块状和棒状的(Cu, Ni)6Sn5,平均厚度约为1µm。在高温加热过程中,由于多个(Cu, Ni)6Sn5晶粒相互连接,形成了直径为5 μ m的大块(Cu, Ni)6Sn5晶粒。SAC/Ni- fe焊点在回流过程中形成了FeSn2层和棒状(Cu, Ni)6Sn5晶粒。在150℃时效过程中,棒状分散(Cu, Ni)6Sn5晶粒开始相互连接,最终在FeSn2相上形成外IMC层。在Ni-W-P焊点中,IMCs的形貌和组成与Ni-P焊点相似。(Cu, Ni)6Sn5在回流焊时厚度较厚,但时效120h后在Ni- p焊点中厚度低于该厚度。实验结果表明,与传统的Ni-P复合材料相比,Ni-W-P复合材料和Ni-Fe复合材料均表现出良好的扩散阻挡效应,可以抑制Kirkendall空洞的形成。其中,(Cu, Ni)6Sn5在SnAgCu/Ni- w - p界面形成,总厚度约为2µm,而在SnAgCu/Ni- fe界面形成的FeSn2层厚度仅为1µm,并在表面形成分散的(Cu, Ni)6Sn5晶粒。Fe元素的加入能显著抑制Ni的扩散和Ni3Sn4的形成,表现出比Ni- p UBM更强的扩散屏障。在Ni-P中加入W可显著降低老化过程中界面imc的生长速度,显示出在长期老化过程中工作的电子器件的潜力。
Diffusion Barrier Effect of Ni-W-P and Ni-Fe UBMs during High Temperature Storage
The high temperature storage test (HTST) was conducted on the SnAgCu/Ni-W-P and Ni-Fe solder joints. While the conventional Ni-P solder joints were used as comparison to study the diffusion barrier effect of Ni-W-P and Ni-Fe under bump metallization (UBM). Both cross section and top view for the microstructural evolution of solder joints during 150°C aging were observed by the scanning electron microscope (SEM). After reflow, (Cu, Ni)6Sn5 in the forms of chunky and rod-like was formed with an average thickness of around 1µm in SAC/Ni-P solder joint. During the HTST, bulky (Cu, Ni)6Sn5 grains were formed with a 5µm in diameter due to the interconnections of multiple (Cu, Ni)6Sn5 grains. In terms of SAC/Ni-Fe solder joints, during the reflow process, FeSn2 layer and rod-like (Cu, Ni)6Sn5 grains were formed. During the aging at 150°C, rod-like dispersed (Cu, Ni)6Sn5 grains started to interconnect with each other which finally progressed into an outer IMC layer upon FeSn2 phase. In Ni-W-P solder joints, the morphology and composition of IMCs is similar to it in Ni-P solder joints. The thickness of (Cu, Ni)6Sn5 was much thicker during reflow but turned out to be below it in Ni-P solder joints after 120h aging. Experimentally, both Ni-W-P and Ni-Fe UBM show an excellent diffusion barrier effect to retard the Kirkendall voids formation compared to the conventional Ni-P UBM. Specifically, (Cu, Ni)6Sn5 were formed at the SnAgCu/ Ni-W-P interface with a total thickness around 2µm, while only a 1µm thick FeSn2 layer accompanying with several dispersing (Cu, Ni)6Sn5 grains outside were formed at the SnAgCu/Ni-Fe interface. The addition of Fe elements can dramatically supress the diffusion of Ni and the formation of Ni3Sn4, which shows superior diffusion barrier compared to Ni-P UBM. The addition of W into Ni-P significantly decreases the growth rate of the interfacial IMCs during the aging process, which shows potential for electronic devices operated under long-term aging process.