用水溶性牺牲层制备太阳能电池用多晶硅膜

Semin Kang, Jungkyu Kwon, C. Jeong, Sung-In Mo, J. Oh, Sangwoo Ryu
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摘要

在晶体硅太阳能电池的制造过程中,由于硅锭线锯制薄晶圆而造成的切口损失不可避免地限制了电力生产成本的降低。为了避免切口损失,在50-150 μm的硅晶圆上直接生长多孔分离层,在剥离过程中可以机械破碎,已经得到了广泛的研究。然而,几个问题,包括表面的平坦后,剥落仍然没有解决。在这项工作中,介绍了一种替代方法,即在母衬底和生长的晶体硅层之间插入水溶性Sr3Al2O6 (SAO)牺牲层。采用等离子体增强CVD工艺在SAO/Si表面生长多晶硅层,将SAO溶解于水中后,可成功制备硅膜。同样的方法也可以用于制备柔性非晶硅膜。进一步的研究正在进行,以增加剥离晶圆的尺寸,这有望有效地降低晶体硅太阳能电池的生产成本。
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Polycrystalline Silicon Membranes for Solar Cells Fabricated Using Water-soluble Sacrificial Layers
During the fabrication of crystalline silicon solar cells, kerf-loss caused by the wire-sawing of silicon ingots to produce thin wafers inevitably limits the reduction of electricity production cost. To avoid the kerf-loss, direct growth of crystalline silicon wafers of 50-150 μm with a porous separation layer that can be mechanically broken during the exfoliation process, has been widely investigated. However, several issues including flattening of the surface after the exfoliation remain unsolved. In this work an alternative method that utilizes a water-soluble Sr3Al2O6 (SAO) sacrificial layer inserted between the mother substrate and the grown crystalline silicon layers is introduced. Polycrystalline silicon layers were grown on SAO/Si by plasma-enhanced CVD process and silicon membranes could be successfully obtained after the dissolution of SAO in the water. Same process could be applied to obtain flexible amorphous silicon membranes. Further research is being conducted to increase the size of the exfoliated wafer, which expects to reduce the production cost of crystalline silicon solar cells effectively.
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