{"title":"SiC可靠性研究工具的开发","authors":"T. Phulpin , A. Jaffre , J. Alvares , M. Lazar","doi":"10.1016/j.ssel.2020.01.002","DOIUrl":null,"url":null,"abstract":"<div><p>Understanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual method for silicon carbide (SiC) devices. This semiconductor offers very interesting properties for power electronics in comparison with Si, but these failures are different and need to be studied. This paper will compare different methods applied to failures, focusing on lock-in thermography and micro-Raman analysis. Three devices will be evaluated, a vertical diode, a lateral diode and a MESFET. A methodology will finally be recommended as a valuable and robust solution for failures mechanisms further studies.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"1 2","pages":"Pages 131-139"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2020.01.002","citationCount":"0","resultStr":"{\"title\":\"Development of SiC reliability study tool\",\"authors\":\"T. Phulpin , A. Jaffre , J. Alvares , M. Lazar\",\"doi\":\"10.1016/j.ssel.2020.01.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Understanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual method for silicon carbide (SiC) devices. This semiconductor offers very interesting properties for power electronics in comparison with Si, but these failures are different and need to be studied. This paper will compare different methods applied to failures, focusing on lock-in thermography and micro-Raman analysis. Three devices will be evaluated, a vertical diode, a lateral diode and a MESFET. A methodology will finally be recommended as a valuable and robust solution for failures mechanisms further studies.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"1 2\",\"pages\":\"Pages 131-139\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2020.01.002\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208820300028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208820300028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Understanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual method for silicon carbide (SiC) devices. This semiconductor offers very interesting properties for power electronics in comparison with Si, but these failures are different and need to be studied. This paper will compare different methods applied to failures, focusing on lock-in thermography and micro-Raman analysis. Three devices will be evaluated, a vertical diode, a lateral diode and a MESFET. A methodology will finally be recommended as a valuable and robust solution for failures mechanisms further studies.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
