E. Ghegin, F. Nemouchi, J. Lábár, S. Favier, C. Perrin, K. Hoummada, S. Gurbán, P. Gergaud
{"title":"III-V激光接触技术中Ni薄膜在n-InP衬底上的固相反应","authors":"E. Ghegin, F. Nemouchi, J. Lábár, S. Favier, C. Perrin, K. Hoummada, S. Gurbán, P. Gergaud","doi":"10.1109/IITC-MAM.2015.7325664","DOIUrl":null,"url":null,"abstract":"The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"84 1","pages":"269-272"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology\",\"authors\":\"E. Ghegin, F. Nemouchi, J. Lábár, S. Favier, C. Perrin, K. Hoummada, S. Gurbán, P. Gergaud\",\"doi\":\"10.1109/IITC-MAM.2015.7325664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"84 1\",\"pages\":\"269-272\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology
The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.