{"title":"基于类高斯传输系数的栅极全能InxGa1-xAs纳米线MOSFET精确物理输运模型","authors":"M. Islam, M. A. Masud, Q. Khosru","doi":"10.1166/MAT.2018.1507","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18271,"journal":{"name":"Materials Focus","volume":"20 1","pages":"268-272"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Accurate Physical Based Transport Model of Gate-All-Around InxGa1–xAs Nanowire MOSFET Using Gaussian-Like Transmission Co-Efficient\",\"authors\":\"M. Islam, M. A. Masud, Q. Khosru\",\"doi\":\"10.1166/MAT.2018.1507\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":18271,\"journal\":{\"name\":\"Materials Focus\",\"volume\":\"20 1\",\"pages\":\"268-272\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Focus\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/MAT.2018.1507\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Focus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/MAT.2018.1507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}