{"title":"采用70nm mHEMT工艺的ka波段低噪声放大器用于宽带通信","authors":"Xu Cheng, L. Zhang, Xian‐jing Deng","doi":"10.1109/CSTIC.2017.7919889","DOIUrl":null,"url":null,"abstract":"The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"68 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Ka-band low noise amplifier using 70nm mHEMT process for wideband communication\",\"authors\":\"Xu Cheng, L. Zhang, Xian‐jing Deng\",\"doi\":\"10.1109/CSTIC.2017.7919889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"68 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ka-band low noise amplifier using 70nm mHEMT process for wideband communication
The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.
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