硅无线电集成:架构和技术:从笛卡尔零中频接收和发射到极零I和Q，从硅双极到体和SOI CMOS

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852679

J. Sevenhans

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引用次数: 5

摘要

在九十年代，我们见证了硅射频集成的一系列进步:从八十年代末为GSM和DECT引入的第一个集成硅双极无线电到今天使用SiGe BiCMOS技术的全单芯片集成能力。射频设计曾经是一种黑色艺术，今天它正在成为一种“正常做法”。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon radio integration: architectures and technology: from cartesian zero IF receive & transmit to polar zero I and Q, from silicon bipolar to bulk and SOI CMOS

During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the full single chip integration capabilities today using SiGe BiCMOS technologies. Where RF design used to be a black art, it is becoming a "normal practice" today.

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Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

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