铁离子注入剂量对CdS纳米线光学和结构性能的影响

ADVANCES IN BASIC SCIENCE (ICABS 2019) Pub Date : 2019-08-29 DOI:10.1063/1.5122358

J. Kaur, Ravinder Singh

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摘要

CdS属于II-VI族，具有2.42 eV的宽光学带隙，适合用于光伏和激光器件领域。它通常是一个n型半导体和d…

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Effect of iron ion implantation dose on optical and structural properties of CdS nanowires

CdS being a member of II-VI group, having a wide optical band gap of 2.42 eV makes it suitable for use in the area of photovoltaic and laser devices. It is normally an n-type semiconductor and by d...

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ADVANCES IN BASIC SCIENCE (ICABS 2019)

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