{"title":"碳化硅器件高温表征系统","authors":"L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu","doi":"10.1109/SMICND.2012.6400734","DOIUrl":null,"url":null,"abstract":"In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"449-452"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High temperature characterization system for silicon carbide devices\",\"authors\":\"L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu\",\"doi\":\"10.1109/SMICND.2012.6400734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"18 1\",\"pages\":\"449-452\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High temperature characterization system for silicon carbide devices
In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.
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