{"title":"铁磁金属和铁磁氧化物的隧道自旋极化及其对隧道磁电阻的影响","authors":"G. Suchaneck","doi":"10.3390/electronicmat3030019","DOIUrl":null,"url":null,"abstract":"This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance\",\"authors\":\"G. Suchaneck\",\"doi\":\"10.3390/electronicmat3030019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.\",\"PeriodicalId\":18610,\"journal\":{\"name\":\"Modern Electronic Materials\",\"volume\":\"77 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modern Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/electronicmat3030019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/electronicmat3030019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance
This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.